Results 171 to 180 of about 18,009 (224)

Misfit dislocations in lattice-mismatched epitaxial films

Critical Reviews in Solid State and Materials Sciences, 1992
Abstract This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail.
Robert Hull, John C. Bean
openaire   +3 more sources

Ultrastrong steel via minimal lattice misfit and high-density nanoprecipitation

Nature, 2017
Next-generation high-performance structural materials are required for lightweight design strategies and advanced energy applications. Maraging steels, combining a martensite matrix with nanoprecipitates, are a class of high-strength materials with the potential for matching these demands.
Jiang, S., Wang, H., Wu, Y., Liu, X., Chen, H., Yao, M., Gault, B., Ponge, D., Raabe, D., Hirata, A., Chen, M., Wang, Y., Lu, Z.   +12 more
openaire   +5 more sources

Lattice-parameter change induced by accommodation of precipitate/matrix misfit; misfitting nitrides in ferrite

Acta Materialia, 2015
Abstract Upon nitriding of iron-based alloys, development of misfitting coherent nitride precipitates in a ferrite matrix induces an overall expansion of the ferrite lattice. This lattice expansion was quantitatively determined by X-ray diffraction from the change of the lattice parameter of ferrite of homogenously nitrided Fe Cr and Fe V alloys ...
Akhlaghi, M., Steiner, T., Meka, S., Leineweber, A., Mittemeijer, E.   +4 more
openaire   +4 more sources

Lattice misfit during ageing of a polycrystalline nickel-base superalloy

Acta Materialia, 2013
Abstract The temporal evolution of the lattice parameters and lattice misfit of an advanced polycrystalline nickel-base superalloy have been studied in situ during an ageing heat treatment using synchrotron X-ray diffraction. During ageing, the γ and γ ′ lattice parameters were both observed to decrease, a trend that cannot be attributed to a loss
D.M. Collins, L. Yan, E.A. Marquis, L.D. Connor, J.J. Ciardiello, A.D. Evans, H.J. Stone   +6 more
openaire   +3 more sources

Colloidal Synthesis of Nanohelices via Bilayer Lattice Misfit

Journal of the American Chemical Society, 2020
Helical structures are ubiquitous in natural and synthetic materials across multiple length scales. Excellent and sometimes unusual chiral optical, mechanical, and sensing properties have been previously demonstrated in such symmetry-breaking shape, yet a general principle to realize helical structures at the sub-100 nm scale via colloidal synthesis ...
Yang Liu, Yuda Li, Soojin Jeong, Yi Wang, Jun Chen, Xingchen Ye   +5 more
openaire   +2 more sources

Insignificance of Lattice Misfit for Epitaxy

Journal of Vacuum Science and Technology, 1970
Au, Ag and Al films evaporation in ultrahigh vacuum on LiF and MgO surfaces, showing insignificant role of lattice misfit for ...
A. K. Green, J. Dancy, E. Bauer
openaire   +1 more source

Lattice strain and misfit dislocation in GaAs-GaAlAsP heterojunction

Journal of Crystal Growth, 1980
The lattice strain and misfit dislocations in a GaAs-GaAlAsP heterojunction were examined. The change in lattice strain with the composition ratio or the position of the crystal was measured, and it was found that some of the misfit dislocations introduced in the heterojunction were edge-type dislocations.
J. Nishizawa, Y. Okuno, M. Fukase, H. Tadano   +3 more
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Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

Philosophical Magazine A, 1997
Abstract Heterostructures in the form of thin layers of one material grown on a substrate have been the subject of intense study for several years. In the case of semiconductor systems the aim is to grow epitaxial layers of, for example, Si1-xGex on Si, and devices based on such structures are already in use.
S. C. Jain, A. H. Harker, R. A. Cowley
openaire   +1 more source

Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures

Semiconductor Science and Technology, 1991
High resolution X-ray diffraction has been used to investigate the relative tilt between epilayer and substrate lattice planes of different semiconductor heterostructures. All epilayers were grown on (001) GaAs substrates misoriented by 2 degrees towards the next (011) direction.
Pesek, A., Hingerl, K., Riesz, Ferenc, Lischka, K.   +3 more
openaire   +1 more source