Results 181 to 190 of about 18,009 (224)

Doping induced lattice misfit in 4H–SiC homoepitaxy

Journal of Crystal Growth, 2012
Abstract The impact of doping on the lattice constants of 4H–silicon carbide (4H–SiC) is an important material aspect influencing several steps of material and device production. Dopant incorporation in 4H–SiC causes misfit between the highly N-doped substrate and differently doped epilayers and hence, wafer bowing and the existence of a critical ...
Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Georg Müller, Arnd-Dietrich Weber, Eduard Volz, Gerd Trachta, Erdmann Spiecker, Bernd Thomas   +8 more
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Misfit Dislocations in a Two-Dimensional Lattice Model

Journal of the Physical Society of Japan, 2007
We study misfit dislocations in a two-dimensional elastic lattice model of epitaxy using Green's function. The interaction between the dislocations of the lattice model is compared with that of continuum elasticity theory. It is found that the behavior of the lattice model at a long distance agrees with that of standard continuum theory, but an ...
Hiroyasu Katsuno, Makio Uwaha, Yukio Saito   +2 more
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Lattice misfit between GaP and Si

Scripta Metallurgica, 1985
Etude par diffraction d'electron en utilisant la methode de faisceau convergent pour GaP depose de facon epitaxique sur Si par jet ...
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O-lattice analyses of interfacial misfit. I. General considerations

Philosophical Magazine A, 1993
Abstract Misfits between lattice points of intersecting crystals and between corresponding lattice planes are analysed using O-lattice constructions referred to both direct and reciprocal spaces. O-lattice planes are described by the same expression as the ‘Moire planes’ formed by the mismatch of correlated planes, which facilitates the study of the O ...
W.-Z. Zhang, G. R. Purdy
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Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases

Journal of Applied Physics, 1988
AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (HBTs) with lattice-mismatched InGaAs bases have been studied for determining the effect of misfit defects on device performance. Defect structures were investigated using scanning cathodoluminescence and transmission electron microscopy.
Y. Ashizawa, S. Akbar, W. J. Schaff, L. F. Eastman, E. A. Fitzgerald, D. G. Ast   +5 more
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Thermodynamic properties and lattice misfit of Ir-based superalloys

Intermetallics, 2013
Abstract First principles calculation reveals that the temperature-dependent heat capacities of Ir and four Ir3X (X = Ti, Nb, Zr, and Hf) phases at a certain temperature are very close to each other due to their similar densities of states of phonons, and for each phase, the difference between CP and CV is also very small.
C.P. Liang, H.R. Gong
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The role of lattice misfit in epitaxy

Critical Reviews in Solid State and Materials Sciences, 1978
Abstract Epitaxy is the phenomenon in which the orientation of a crystal 0 which grows on a crystalline substrate S, usually different from 0, is related to that of S, even though their normal lattices do not match at their common interface. Apart from its fundamental interest, epitaxy is important in view of its application in the fabrication of ...
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Morphologies of epitaxial islands on a lattice-misfitted substrate

Chinese Physics B, 2008
Under certain growth conditions for systems with a film/substrate lattice misfit, the deposited material is known to aggregate into island-like shapes. We have obtained an analytical expression of the total free energy, which consists of strain energy, surface energy and interfacial energy of a coherent island/substrate system, and the change of ...
Wang Jian-Ping, Zhou Wang-Min, Wang Chong-Yu, Yin Shu-Yuan   +3 more
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Lattice Misfit and Decomposition in Ni-Al-Mo Alloys

MRS Proceedings, 1989
ABSTRACTThe effect of lattice mismatch δ between the γ-matrix and γ'-precipitates on the decomposition process of Ni-Al-Mo alloys has been investigated. The results show that for δ = 0 spherical precipitates are formed without any orientational correlation. For δ > 0 non-spherical particles, aligned along <100>, are produced.
Hector Calderon, Gernot Kostorz
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Heteroepitaxy of Large-Misfit Systems: Role of Coincidence Lattice

Crystal Research and Technology, 2000
We present a detailed study about the epitaxial growth of various modern materials systems with large lattice misfit to GaAs substrates. The epitaxial alignment during the initial stage of growth and the misfit accommodation process are determined by the particular interface structures which we have investigated by high-resolution transmission electron
A. Trampert, K.H. Ploog
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