Results 191 to 200 of about 18,009 (224)
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Phase diagram of a model alloy with lattice misfit
Physica A: Statistical Mechanics and its Applications, 2000Abstract The influence of elastic interactions on the phase diagram of a two-dimensional model binary alloy with antiferromagnetic nearest and ferromagnetic next-nearest-neighbor-type interactions is studied by Monte Carlo simulations and finite size scaling techniques.
D Fischer, P Nielaba
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Critical Misfits for Lattice-Matched Strained Monolayers
1988Epitaxial thin layers or multilayers can now be grown with a high degree of perfection using ultra high vacuum evaporation techniques. Although it is still in general difficult to predict which material can be grown onto a particular substrate, a number of qualitative guidelines may be extracted from existing theories.
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Predicted lattice-misfit stresses in a gallium-nitride (GaN) film
SPIE Proceedings, 2017Effective, easy-to-use and physically meaningful analytical predictive models are developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed.
E. Suhir, S. Yi
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Misfit Dislocation Energy in a Crystal with Lattice Parameter Gradient
Japanese Journal of Applied Physics, 1974Expressions are derived for the strain, stress, displacement and energy associated with a single misfit dislocation located in the diffusion zone of two epitaxial crystals with differing lattice parameters, assuming a linear gradient of lattice constant.
Gabriel G. Cillié +1 more
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Collective Modes Of Misfit Dislocations in Lattice - Mismatched Thin Films
MRS Proceedings, 1997ABSTRACTWe study the nature and spectrum of fundamental vibrational excitations in the assembly of misfit accomodating dislocations. The physical system considered is a Lomer array of equispaced dislocations in a lattice-mismatched interface between a substrate and a thin film with similar elastic properties.
L. B. Hovakimian, Shun-Ichiro Tanaka
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Growth of Ordered Domains in a Computer Model Alloy with Lattice Misfit
Journal of Statistical Physics, 1999zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Nielaba, P., Fratzl, P., Lebowitz, J.
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Accommodation of lattice misfit in Si1−xGex/Si heterostructures
Journal of Crystal Growth, 1990Strain accomodation by formation of misfit dislocations for Si1 - xGex epitaxial layers on Si(001) is described, based on transmission electron microscopy studies. Misfit dislocations introduced at the interfaces for x ≤ 0.5 are inclined 60°-type dislocations.
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Japanese Journal of Applied Physics, 2010
The growth of an epitaxial film with a large lattice misfit to substrates is interpreted as domain growth with domain matching by the coincidence site lattice (CSL), in which it is assumed that (m×n) film lattice units are superimposed on (k×l) substrate lattice units.
Satoru Kaneko +7 more
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The growth of an epitaxial film with a large lattice misfit to substrates is interpreted as domain growth with domain matching by the coincidence site lattice (CSL), in which it is assumed that (m×n) film lattice units are superimposed on (k×l) substrate lattice units.
Satoru Kaneko +7 more
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X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions
Applied Physics Letters, 1986High-resolution x-ray diffraction measurements have been carried out in AlxGa1−xAs and InxGa1−xAs grown by the molecular beam epitaxy method on (001) GaAs substrates. The thin epitaxial layers in these lattice-mismatched semiconductor single heterojunctions are uniformly distorted and there is an elastic limit for large x.
K. Kamigaki +5 more
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Can epilayer tilt relieve misfit strain in lattice-Mismatched heterostructures?
Vacuum, 1995Small tilting of the epilayer lattice planes is commonly observed in lattice-mismatched epilayers grown on vicinal substrates. This tilt is commonly believed to be an alternative strain-relieving mechanism to the formation of misfit dislocations. It is shown that this is not likely for (100) heterosystems, because the introduction of those dislocations
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