Results 191 to 200 of about 474,991 (233)

Lattice strain and misfit dislocation in GaAs-GaAlAsP heterojunction

Journal of Crystal Growth, 1980
The lattice strain and misfit dislocations in a GaAs-GaAlAsP heterojunction were examined. The change in lattice strain with the composition ratio or the position of the crystal was measured, and it was found that some of the misfit dislocations introduced in the heterojunction were edge-type dislocations.
J. Nishizawa, Y. Okuno, M. Fukase, H. Tadano   +3 more
openaire   +1 more source

Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

Philosophical Magazine A, 1997
Abstract Heterostructures in the form of thin layers of one material grown on a substrate have been the subject of intense study for several years. In the case of semiconductor systems the aim is to grow epitaxial layers of, for example, Si1-xGex on Si, and devices based on such structures are already in use.
S. C. Jain, A. H. Harker, R. A. Cowley
openaire   +1 more source

Morphologies of epitaxial islands on a lattice-misfitted substrate

Chinese Physics B, 2008
Under certain growth conditions for systems with a film/substrate lattice misfit, the deposited material is known to aggregate into island-like shapes. We have obtained an analytical expression of the total free energy, which consists of strain energy, surface energy and interfacial energy of a coherent island/substrate system, and the change of ...
Wang Jian-Ping, Zhou Wang-Min, Wang Chong-Yu, Yin Shu-Yuan   +3 more
openaire   +1 more source

The influence of interdiffusion on the lattice misfit of epitaxial structures

Journal of Crystal Growth, 1992
Abstract The concept of lattice misfit and strain distribution at a heterointerface is reconsidered, taking into account the interdiffusion of substrate and layer components. Based on calculated compositional profiles for multicomponent solid solutions, the respective lattice-parameter profiles and stress profiles in the interface region of an ...
I. Utke, L. Parthier, M. Schenk
openaire   +1 more source

The role of lattice misfit in epitaxy

Critical Reviews in Solid State and Materials Sciences, 1978
Abstract Epitaxy is the phenomenon in which the orientation of a crystal 0 which grows on a crystalline substrate S, usually different from 0, is related to that of S, even though their normal lattices do not match at their common interface. Apart from its fundamental interest, epitaxy is important in view of its application in the fabrication of ...
openaire   +1 more source

Lattice misfit between GaP and Si

Scripta Metallurgica, 1985
Etude par diffraction d'electron en utilisant la methode de faisceau convergent pour GaP depose de facon epitaxique sur Si par jet ...
openaire   +1 more source

Misfit Dislocations in a Two-Dimensional Lattice Model

Journal of the Physical Society of Japan, 2007
We study misfit dislocations in a two-dimensional elastic lattice model of epitaxy using Green's function. The interaction between the dislocations of the lattice model is compared with that of continuum elasticity theory. It is found that the behavior of the lattice model at a long distance agrees with that of standard continuum theory, but an ...
Hiroyasu Katsuno, Makio Uwaha, Yukio Saito   +2 more
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Phase diagram of a model alloy with lattice misfit

Physica A: Statistical Mechanics and its Applications, 2000
Abstract The influence of elastic interactions on the phase diagram of a two-dimensional model binary alloy with antiferromagnetic nearest and ferromagnetic next-nearest-neighbor-type interactions is studied by Monte Carlo simulations and finite size scaling techniques.
D Fischer, P Nielaba
openaire   +1 more source

Lattice-parameter change induced by accommodation of precipitate/matrix misfit; misfitting nitrides in ferrite

Acta Materialia, 2015
Abstract Upon nitriding of iron-based alloys, development of misfitting coherent nitride precipitates in a ferrite matrix induces an overall expansion of the ferrite lattice. This lattice expansion was quantitatively determined by X-ray diffraction from the change of the lattice parameter of ferrite of homogenously nitrided Fe Cr and Fe V alloys ...
Akhlaghi, M., Steiner, T., Meka, S., Leineweber, A., Mittemeijer, E.   +4 more
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Growth of Ordered Domains in a Computer Model Alloy with Lattice Misfit

Journal of Statistical Physics, 1999
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Nielaba, P., Fratzl, P., Lebowitz, J.
openaire   +3 more sources