Results 181 to 190 of about 17,880 (239)

Colloidal Synthesis of Nanohelices via Bilayer Lattice Misfit

Journal of the American Chemical Society, 2020
Helical structures are ubiquitous in natural and synthetic materials across multiple length scales. Excellent and sometimes unusual chiral optical, mechanical, and sensing properties have been previously demonstrated in such symmetry-breaking shape, yet a general principle to realize helical structures at the sub-100 nm scale via colloidal synthesis ...
Yang Liu, Yuda Li, Soojin Jeong, Yi Wang, Jun Chen, Xingchen Ye   +5 more
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Insignificance of Lattice Misfit for Epitaxy

Journal of Vacuum Science and Technology, 1970
Au, Ag and Al films evaporation in ultrahigh vacuum on LiF and MgO surfaces, showing insignificant role of lattice misfit for ...
A. K. Green, J. Dancy, E. Bauer
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Misfit dislocations in lattice-mismatched epitaxial films

Critical Reviews in Solid State and Materials Sciences, 1992
Abstract This article reviews current experimental and theoretical knowledge of the relaxation of lattice-mismatch strain via misfit dislocations in heteroepitaxial semiconductor films. The energetics and kinetics of misfit dislocation nucleation, propagation, and interaction processes are described in detail.
Robert Hull, John C. Bean
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Lattice strain and misfit dislocation in GaAs-GaAlAsP heterojunction

Journal of Crystal Growth, 1980
The lattice strain and misfit dislocations in a GaAs-GaAlAsP heterojunction were examined. The change in lattice strain with the composition ratio or the position of the crystal was measured, and it was found that some of the misfit dislocations introduced in the heterojunction were edge-type dislocations.
J. Nishizawa, Y. Okuno, M. Fukase, H. Tadano   +3 more
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Misfit strain and misfit dislocations in lattice mismatched epitaxial layers and other systems

Philosophical Magazine A, 1997
Abstract Heterostructures in the form of thin layers of one material grown on a substrate have been the subject of intense study for several years. In the case of semiconductor systems the aim is to grow epitaxial layers of, for example, Si1-xGex on Si, and devices based on such structures are already in use.
S. C. Jain, A. H. Harker, R. A. Cowley
openaire   +1 more source

Lattice misfit and relative tilt of lattice planes in semiconductor heterostructures

Semiconductor Science and Technology, 1991
High resolution X-ray diffraction has been used to investigate the relative tilt between epilayer and substrate lattice planes of different semiconductor heterostructures. All epilayers were grown on (001) GaAs substrates misoriented by 2 degrees towards the next (011) direction.
Pesek, A., Hingerl, K., Riesz, Ferenc, Lischka, K.   +3 more
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Doping induced lattice misfit in 4H–SiC homoepitaxy

Journal of Crystal Growth, 2012
Abstract The impact of doping on the lattice constants of 4H–silicon carbide (4H–SiC) is an important material aspect influencing several steps of material and device production. Dopant incorporation in 4H–SiC causes misfit between the highly N-doped substrate and differently doped epilayers and hence, wafer bowing and the existence of a critical ...
Birgit Kallinger, Patrick Berwian, Jochen Friedrich, Georg Müller, Arnd-Dietrich Weber, Eduard Volz, Gerd Trachta, Erdmann Spiecker, Bernd Thomas   +8 more
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Lattice-parameter change induced by accommodation of precipitate/matrix misfit; misfitting nitrides in ferrite

Acta Materialia, 2015
Abstract Upon nitriding of iron-based alloys, development of misfitting coherent nitride precipitates in a ferrite matrix induces an overall expansion of the ferrite lattice. This lattice expansion was quantitatively determined by X-ray diffraction from the change of the lattice parameter of ferrite of homogenously nitrided Fe Cr and Fe V alloys ...
Akhlaghi, M., Steiner, T., Meka, S., Leineweber, A., Mittemeijer, E.   +4 more
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Misfit Dislocations in a Two-Dimensional Lattice Model

Journal of the Physical Society of Japan, 2007
We study misfit dislocations in a two-dimensional elastic lattice model of epitaxy using Green's function. The interaction between the dislocations of the lattice model is compared with that of continuum elasticity theory. It is found that the behavior of the lattice model at a long distance agrees with that of standard continuum theory, but an ...
Hiroyasu Katsuno, Makio Uwaha, Yukio Saito   +2 more
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Lattice misfit between GaP and Si

Scripta Metallurgica, 1985
Etude par diffraction d'electron en utilisant la methode de faisceau convergent pour GaP depose de facon epitaxique sur Si par jet ...
openaire   +1 more source