Results 201 to 210 of about 17,880 (239)

Predicted lattice-misfit stresses in a gallium-nitride (GaN) film

SPIE Proceedings, 2017
Effective, easy-to-use and physically meaningful analytical predictive models are developed for the evaluation the lattice-misfit stresses (LMS) in a semiconductor film grown on a circular substrate (wafer). The two-dimensional (plane-stress) theory-of-elasticity approximation (TEA) is employed.
E. Suhir, S. Yi
openaire   +1 more source

Misfit Dislocation Energy in a Crystal with Lattice Parameter Gradient

Japanese Journal of Applied Physics, 1974
Expressions are derived for the strain, stress, displacement and energy associated with a single misfit dislocation located in the diffusion zone of two epitaxial crystals with differing lattice parameters, assuming a linear gradient of lattice constant.
Gabriel G. Cillié, Johannes H. van der Merwe   +1 more
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Lattice misfit during ageing of a polycrystalline nickel-base superalloy

Acta Materialia, 2013
Abstract The temporal evolution of the lattice parameters and lattice misfit of an advanced polycrystalline nickel-base superalloy have been studied in situ during an ageing heat treatment using synchrotron X-ray diffraction. During ageing, the γ and γ ′ lattice parameters were both observed to decrease, a trend that cannot be attributed to a loss
D.M. Collins, L. Yan, E.A. Marquis, L.D. Connor, J.J. Ciardiello, A.D. Evans, H.J. Stone   +6 more
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Collective Modes Of Misfit Dislocations in Lattice - Mismatched Thin Films

MRS Proceedings, 1997
ABSTRACTWe study the nature and spectrum of fundamental vibrational excitations in the assembly of misfit accomodating dislocations. The physical system considered is a Lomer array of equispaced dislocations in a lattice-mismatched interface between a substrate and a thin film with similar elastic properties.
L. B. Hovakimian, Shun-Ichiro Tanaka
openaire   +1 more source

Growth of Ordered Domains in a Computer Model Alloy with Lattice Misfit

Journal of Statistical Physics, 1999
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Nielaba, P., Fratzl, P., Lebowitz, J.
openaire   +3 more sources

Accommodation of lattice misfit in Si1−xGex/Si heterostructures

Journal of Crystal Growth, 1990
Strain accomodation by formation of misfit dislocations for Si1 - xGex epitaxial layers on Si(001) is described, based on transmission electron microscopy studies. Misfit dislocations introduced at the interfaces for x ≤ 0.5 are inclined 60°-type dislocations.
openaire   +1 more source

Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System

Japanese Journal of Applied Physics, 2010
The growth of an epitaxial film with a large lattice misfit to substrates is interpreted as domain growth with domain matching by the coincidence site lattice (CSL), in which it is assumed that (m×n) film lattice units are superimposed on (k×l) substrate lattice units.
Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Manabu Yasui, Masayasu Soga, Yasuo Hirabayashi, Hiroshi Funakubo, Mamoru Yoshimoto   +7 more
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X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions

Applied Physics Letters, 1986
High-resolution x-ray diffraction measurements have been carried out in AlxGa1−xAs and InxGa1−xAs grown by the molecular beam epitaxy method on (001) GaAs substrates. The thin epitaxial layers in these lattice-mismatched semiconductor single heterojunctions are uniformly distorted and there is an elastic limit for large x.
K. Kamigaki, H. Sakashita, H. Kato, M. Nakayama, N. Sano, H. Terauchi   +5 more
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Can epilayer tilt relieve misfit strain in lattice-Mismatched heterostructures?

Vacuum, 1995
Small tilting of the epilayer lattice planes is commonly observed in lattice-mismatched epilayers grown on vicinal substrates. This tilt is commonly believed to be an alternative strain-relieving mechanism to the formation of misfit dislocations. It is shown that this is not likely for (100) heterosystems, because the introduction of those dislocations
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Lattice misfit by convergent-beam electron diffraction - Part II: Energy measurement

Proceedings, annual meeting, Electron Microscopy Society of America, 1984
Geometry measurement described in Part I required photographing the CBED and measuring the height of the triangle Pγ, Pγ' and the folz ring radius Rγ/γ'. These manipulations can be eliminated by an energy measurement approach first described by Steeds. Using the small angle approximation to Bragg's law givesFor a cubic material with lattice constant a,
L. S. Lin, J. M. Walsh
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