Results 191 to 200 of about 3,543 (201)

A compact large signal model of LDMOS

Solid-State Electronics, 2002
Abstract Lateral double-diffused MOSFETs (LDMOS) are becoming more popular in RF power amplifiers for wireless communication applications. The understanding of non-linearity in LDMOS is critical in order to design ultra-linear power amplifiers to meet the stringent needs of current wireless systems. We have developed a compact large signal model that
C.W Tang, K.Y Tong
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High performance Pch-LDMOS transistors in wide range voltage from 35V to 200V SOI LDMOS platform technology

2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011
We have developed high performance Pch-LDMOS transistors in wide range rated voltage from 35V to 200V SOI LDMOS platform technology. By applying a novel channel structure, a high saturation drain current of 172 μA/μm in the 200V Pch-LDMOS transistor was achieved, which is comparable to that of the Nch-LDMOS transistor.
Satoshi Shimamoto, Yohei Yanagida, Shinji Shirakawa, Kenji Miyakoshi, Toshinori Imai, Takayuki Oshima, Junichi Sakano, Shinichiro Wada   +7 more
openaire   +1 more source

Superjunction Power LDMOS on Partial SOI Platform

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007
Superjunction power LDMOS device implemented on the bulk Si substrate suffers from the substrate-assisted depletion (SAD) effect, which causes the charge imbalance, and thus limits the device performance. A new SJ-LDMOS structure integrated on the partial SOI (PSOI) platform is proposed in this paper, which eliminates the SAD completely and enables the
Yu Chen, Kavitha D. Buddharaju, Yung C. Liang, Ganesh S. Samudra, Han Hua Feng   +4 more
openaire   +1 more source

A 40W ultra broadband LDMOS power amplifier

2015 IEEE MTT-S International Microwave Symposium, 2015
An ultra-broadband power amplifier using a Freescale 50V LDMOS device is presented. The power amplifier can deliver 40W PEP power from 2 to 800 MHz with better than 30dBc IM3 at 10 kHz 2-tone spacing. The power gain is 19 dB with ± 1 dB gain flatness across the band at class A operation and 15 dB ± 1 dB gain flatness at class AB configuration, each ...
Kaldi Li, Tiefeng Shi, Song Di, William Yin   +3 more
openaire   +1 more source

High Power LDMOS Transistor for RF-Amplifiers

2007 International Bhurban Conference on Applied Sciences & Technology, 2007
We designed simulated and optimized laterally diffused Si-MOSFET (LDMOS) transistors in Sentaurus TCAD software. By introducing excess interface charge density at the RESURF (reduced surface field) region, a power density 1.5 W/mm with a PAE (power added efficiency) of 45% at 3 GHz were obtained. The gain was 20.3 dB. These results show the enhancement
A. Kashif, C. Svensson, Q. Wahab
openaire   +1 more source

Interdigitated LDMOS

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013
null Jaejune Jang, null Kyu-Heon Cho, null Dongeun Jang, null Minhwan Kim, null Changjoon Yoon, null Junsung Park, null Hyunsil Oh, null Chiho Kim, null Hyoungsoo Ko, null Keunho Lee, null Sangbae Yi   +10 more
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LDMOS Modeling

IEEE Microwave Magazine, 2013
Szhau Lai, Christian Fager, Dan Kuylenstierna, Iltcho Angelov   +3 more
openaire   +1 more source

Capacitance Modelling of LDMOS Transistors

30th European Solid-State Device Research Conference, 2000
E.C. Griffith, S.C. Kelly, J.A. Power, D. Bain, S. Whiston, P. Elbert, M. O'Neill   +6 more
openaire   +1 more source

Band-reconfigurable LDMOS power amplifier

The 40th European Microwave Conference, 2010
Hossein Mashad Nemati, Jan Grahn, Christian Fager   +2 more
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Silicon LDMOS and VDMOS transistors

2011
Wayne Burger, Chris Dragon
openaire   +1 more source