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Impact of Variety Conditions to the Light Induced Degradation
201126th European Photovoltaic Solar Energy Conference and Exhibition; 1516 ...
Vanek, J., Indra, J., Barinka, R.
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Kinetics of light induced degradation in a-Si:H solar cells
Journal of Non-Crystalline Solids, 1991The kinetic model proposed by Redfield and Bube1 for the light induced degradation was found to be self-consistent in explaining the extensive degradation data on solar cells. The model predicts that the effect of thermal annealing under the normal cell operating condition (50°C, AM1.5) is significant which stabilizes the cell at a higher efficiency ...
Liang-fan Chen, Liyou Yang
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Accelerated Light-Induced Degradation Test for Industrial Application
2017Light-induced degradation (LID) is a well-known problem of industrial silicon solar cells and can lead to severe electrical performance loss through the formation of recombination-active defects during the excess carrier injection by illumination or forward biasing. Thereby an effective LID inspection for industry is essential.
Lin, C.-M. +5 more
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Light Induced Degradation – Defect Gettering at Grain Boundaries
2017Under illumination, multi-crystalline PERC solar cells may suffer from a severe efficiency loss up to 20 %rel induced by carrier injection at elevated temperatures which is known as LeTID. Our experiments reveal that LeTID degradation and regeneration occurs rather homogeneously throughout the cell.
Luka, T. +3 more
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Light-Induced Degradation in Crystalline Silicon Solar Cells
Solid State Phenomena, 2003Solar cells manufactured on single-crystalline boron-doped Czochralski-grown silicon (Cz-Si) degrade in efficiency by up to 10% (relative) when exposed to light or minority carriers are injected in the dark until a stable level of performance is reached.
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Hydrogenated Silicon Nitride for Regeneration of Light Induced Degradation
2009The detrimental effect of light induced degradation (LID) becomes more apparent for increasing solar cell efficiency. Especially solar cells which rely on high minority carrier diffusion lengths suffer from LID. Because boron oxygen complexes act as recombination centres for the LID a common solution of this problem is the application of boron free n ...
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