Results 31 to 40 of about 1,353,383 (365)
Enhanced light extraction efficiency of far-ultraviolet-C LEDs by micro-LED array design
Applied Physics Letters, 2023 AlGaN-based far-UVC light emitting diodes (LEDs) with an emission wavelength of 233 nm were fabricated in the form of micro-LED arrays with emitter diameters ranging from 1.5 to 50 μm.
J. Rass +6 more
semanticscholar +1 more source
Advanced Optical Materials, 2023 Perovskite light‐emitting diodes (PeLEDs) are promising candidates for lighting and display applications. However, perovskites usually have a relatively high refractive index compared to organic semiconductors, causing a lower optical efficiency due to a
Guanding Mei +7 more
semanticscholar +1 more source
Molecules, 2021 The far ultraviolet C (UVC) light sources based on carbon nanotube (CNT) field emitters as excitation sources have become promising light sources for sterilization, disinfection, and water purification. However, the low light extraction efficiency of UVC–
Manoj Kumar Chandra Mohan +5 more
doaj +1 more source
High extraction efficiency phosphor design applied in laser lighting
Optics Express, 2023 Laser lighting has great potential to be the next generation of general lighting due to its high brightness and directionality. However, the light extraction efficiency and luminous efficiency from the light exit surface are greatly limited since phosphor structure.
Meng, Yan, Mali, Gong, Jianshe, Ma
openaire +2 more sources
High extraction efficiency InGaN micro-ring light-emitting diodes [PDF]
Applied Physics Letters, 2003 Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced.
Martin, RW +3 more
openaire +3 more sources
Effect of Surface Texture on Light Extraction Efficiency for LEDs
Crystals, 2023 The light extraction efficiency of an LED is dependent on its surface texture. However, the surface of the p-GaN layer is not easy to be etch with inverted hexagonal pyramid structures (IHPS) with small top widths and large depths using existing methods.
Fu-Der Lai
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Improving the Light Extraction Efficiency of GaN-Based Light-Emitting Diode
World Journal of Engineering and Technology, 2021 The light extraction efficiency caused by total internal reflection is low. Based on the analysis of the existing technology, a new design scheme is proposed in this paper to improve the light extraction efficiency. The air gap photonic crystal is embedded on the GaN-based patterned sapphire substrate, which can reduce line misalignment and improve ...
Lianjun Zhang, Zhongqi Fan, Gang Liu
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, 2021 The light extraction efficiency (LEE), external quantum efficiency (EQE), and current–voltage characteristics of deep ultraviolet light emitting diodes (DUV-LEDs) with different aluminum mole fractions in the p-AlGaN layers have been investigated ...
M. Guttmann +6 more
semanticscholar +1 more source
IEEE Photonics Journal, 2020 Fabricating the nanowire ultraviolet light emitting diodes (UV LEDs) has been a promising candidate to dramatically enhance the external quantum efficiency (EQE) of UV LEDs.
Zichen Zhang, Fangliang Gao, Guoqiang Li
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Single-step-fabricated disordered metasurfaces for enhanced light extraction from LEDs
Light: Science & Applications, 2021 While total internal reflection (TIR) lays the foundation for many important applications, foremost fibre optics that revolutionised information technologies, it is undesirable in some other applications such as light-emitting diodes (LEDs), which are a ...
Peng Mao +8 more
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