Results 1 to 10 of about 147,214 (199)
Inductive line tunneling FET using epitaxial tunnel layer with Ge-source and charge enhancement insulation [PDF]
Discover Nano, 2023 In this paper, we propose an inductive line tunneling FET using Epitaxial Tunnel Layer with Ge-Source and Charge Enhancement Insulation (CEI ETL GS-iTFET).
Jyi-Tsong Lin, Yen-Chen Chang
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Analysis of parameters for large cross-section quasi-rectangular EPBM in water-rich sandy strata [PDF]
Scientific ReportsWater-rich sandy stratum, characterized by high permeability, low cohesion, and strong fluidity, poses critical challenges for large-section quasi-rectangular Earth Pressure Balance Shield Machine tunneling.
Shi-ju Ma +4 more
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Low-Power Vertical Tunnel Field-Effect Transistor Ternary Inverter
IEEE Journal of the Electron Devices Society, 2021 In this study, vertical tunnel FET-based ternary CMOS (T-CMOS) is introduced and its electrical characteristics are investigated using TCAD device and mixed-mode simulations with experimentally calibrated tunneling parameters.
Hyun Woo Kim, Daewoong Kwon
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Micromachines, 2023 To give consideration to both chip density and device performance, an In0.53Ga0.47As vertical electron–hole bilayer tunnel field effect transistor (EHBTFET) with a P+-pocket and an In0.52Al0.48As-block (VPB-EHBTFET) is introduced and systematically ...
Hu Liu +7 more
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Compact Trap-Assisted-Tunneling Model for Line Tunneling Field-Effect-Transistor Devices
Applied Sciences, 2020 Trap-assisted-tunneling (TAT) is a well-documented source of severe subthreshold degradation in tunneling field-effect-transistors (TFET). However, the literature lacks in numerical or compact TAT models applied to TFET devices.
Faraz Najam, Yun Seop Yu
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, 2023 AbstractIn this chapter, important research results for the development of a robust and damage-tolerant multimaterial tunnel lining are presented. This includes the production, design and optimization of fiber-reinforced hybrid segmental lining systems based on numerical models and experimental investigations under tunneling loads.
Gerrit Emanuel Neu +11 more
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Fabrication and Characterization of a Novel Si Line Tunneling TFET With High Drive Current
IEEE Journal of the Electron Devices Society, 2020 In this paper, an N-type silicon line tunneling TFET (LT-TFET) with an ultra-shallow N+ pocket was proposed. The pocket was formed by using the germanium preamorphization implantation (Ge PAI), arsenic ultra-low energy implantation and spike annealing ...
Weijun Cheng +8 more
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Multiple Disturbances of Existing Tunnels Caused by Deep Excavation and New Shield Tunnel
Advances in Civil Engineering, 2023 With the continuous development of urban underground spaces, new underground engineering approaches are becoming more similar to existing operating tunnels.
Haoran Li, Fei Ye, Enjie Su, Xingbo Han
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F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
Micromachines, 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Seunghyun Yun +6 more
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Polarization Gradient Effect of Negative Capacitance LTFET
Micromachines, 2022 In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD.
Hao Zhang +8 more
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