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2009
Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Liquid phase epitaxy of Hg1−xCdxCdxTe
Journal of Crystal Growth, 1982We describe the epitaxy of n- and p-Hg1−xCdxTe on CdTe substrates up to 2 cm × 3 cm in area, using an atmospheric pressure horizontal slider system with a tellurium-rich growth liquid. Well controlled growth of Hg1−xCdxTe with x values of 0.2, 0.3, and 0.4 is described. Measurements of the semiconductor characteristics of the grown layers are presented.
J.L. Schmit, R.J. Hager, R.A. Wood
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LIQUID PHASE EPITAXY OF MAGNETIC GARNETS
Journal of Crystal Growth, 1975Abstract In designing rare earth iron garnet compositions for magnetic bubble applications it is usually necessary to deal with no fewer than three cations and often as many as six. LPE has become the dominant process for making garnet films from PbO-B 2 O 3 -Fe 2 O 3 fluxed melts.
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Liquid phase epitaxy of garnets
Journal of Crystal Growth, 1978Abstract A short introduction to the technique of liquid phase epitaxy of single crystal thin films of magnetic garnets is given with the emphasis on the relative merits of vertical and horizontal dipping. For vertical dipping results are given for the thickness profiles from top to bottom of the samples and the inhomogeneities within the film ...
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Liquid phase epitaxial growth of SiC
Journal of Crystal Growth, 1999The characteristics of 4H and 6H-SiC epitaxial growth from the liquid phase by using a sandwich configuration are presented. The preparation procedure of the two-component solvent and the growth technique are described. Growth rates exceeding 300 lm/h have been obtained.
M Syväjärvi +6 more
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Applied Physics Letters, 1980
Intense visible photoluminescence emission has been observed in liquid phase epitaxially grown InP layers which were heavily doped with group-VI (S, Se, Te) elements. Up to 3% Se and over 1020 cm−3 n-type carrier concentrations have been measured in such layers which exhibit InP crystal structures and lattice parameter.
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Intense visible photoluminescence emission has been observed in liquid phase epitaxially grown InP layers which were heavily doped with group-VI (S, Se, Te) elements. Up to 3% Se and over 1020 cm−3 n-type carrier concentrations have been measured in such layers which exhibit InP crystal structures and lattice parameter.
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Nonconservative liquid-phase epitaxy of semiconductors
Soviet Physics Journal, 1988The kinetics of nonconservative liquid-phase epitaxy of semiconductors with replenishment of the solution in a melt under the action of different applied fields and owing to the internal energy of the system itself are analyzed. The physical-chemical laws governing these processes, which are useful for growing high-quality semiconductor epitaxial ...
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Liquid phase epitaxy of Al0.3Ga0.7As islands
Journal of Crystal Growth, 2004Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has
Sun Jie +4 more
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Liquid phase epitaxial growth of CuInS2
Thin Solid Films, 1986Abstract Epitaxial CuInS 2 layers were grown on GaP substrates by liquid phase epitaxy using indium as solvent. Both n- and p-type layers with a wide range of electrical characteristics were obtained at a growth temperature of 805 °C with a cooling rate ranging from 0.6 to 0.8 °C min −1 .
L.W. Chang +3 more
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Liquid Phase Epitaxy of Gallium Nitride
Crystal Growth & Design, 2019In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films.
Daniel F. Jaramillo-Cabanzo +2 more
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