Results 171 to 180 of about 26,029 (244)

Optical and Photoconversion Properties of Ce³⁺-Doped (Ca,Y)₃(Mg,Sc)₂Si₃O₁₂ Films Grown via LPE Method onto YAG and YAG:Ce Substrates. [PDF]

Materials (Basel)
Shakhno A, Gorbenko V, Zorenko T, Fedorov A, Zorenko Y.   +4 more
europepmc   +1 more source

Synthesis of Xenes: physical and chemical methods.

Chem Soc Rev
Molle A, Yuhara J, Yamada-Takamura Y, Sofer Z.   +3 more
europepmc   +1 more source

Epitaxial Growth Control of Crystalline Morphology and Electronic Transport in InSb Nanowires: Competition Between Axial and Radial Growth Modes. [PDF]

Nanomaterials (Basel)
Zhong J, Lin J, Penchev M, Ozkan M, Ozkan CS.   +4 more
europepmc   +1 more source

Progress and Challenges in the Synthesis of Two-Dimensional Lateral Heterostructures. [PDF]

Precis Chem
Yang R, Zhang Z, Lan X, Wu R, Ouyang F, He J.   +5 more
europepmc   +1 more source

Laboratory-based in situ and operando tricolor x-ray photoelectron spectroscopy. [PDF]

Sci Adv
van den Bosch ICG, Zaman JU, Shterk G, Hamed MH, Schneider M, Ratovskii V, Bu Y, Dietrich PM, Koster G, Baeumer C.   +9 more
europepmc   +1 more source

Structural Insights into the Dehydration and Rehydration of Gypsum. [PDF]

Cryst Growth Des
Burgos-Ruiz M, Elert K, Rodriguez-Navarro AB, Ruiz-Agudo E, Rodriguez-Navarro C.   +4 more
europepmc   +1 more source

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Isothermal liquid phase epitaxy

Progress in Crystal Growth and Characterization, 1983
Abstract The epitaxial growth of semiconductor solid solutions from a liquid phase appears to be possible under stringent isothermal conditions. The driving force of such epitaxy can be liquid phase supersaturation caused by isothermal mixing of liquidus solutions or supersaturation in the solid phase resulting from thermodynamic nonequilibrium of ...
V.N. Lozovskii, V.P. Popov, N.V. Vlasenko   +2 more
openaire   +1 more source

Yb:CaF2 grown by liquid phase epitaxy

Optical Materials, 2011
Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates.
Peña, Alexandra, Camy, Patrice, Benayad, Abdelmjid, Doualan, Jean-Louis, Maurel, Clément, Olivier, Mélinda, Nazabal, Virginie, Moncorgé, Richard   +7 more
openaire   +2 more sources

Liquid Phase Epitaxy of InP

Journal of The Electrochemical Society, 1974
Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity epitaxial layers. The layers were grown at 720°‐560°C on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed.
K. Hess, N. Stath, K. W. Benz
openaire   +1 more source

Liquid phase epitaxy of AlGaInSb

Journal of Crystal Growth, 1985
Abstract Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were ...
E. Lendvay, V.A. Gevorkyan, L. Petrás, I. Pozsgai, T. Görög, A.L. Tóth   +5 more
openaire   +1 more source