Results 171 to 180 of about 5,232 (243)

General principle of ferroelectric topological domain formation. [PDF]

Sci Adv
Wang J, Gao R, Tang S, Dong S, Liang M, Yang J, Yang H, Nie Z, Liang D, Wang Q, Wang D, Taazayet WB, Zhang S, Huang H, Nan CW.   +14 more
europepmc   +1 more source

ZnCdO:Eu Epitaxially Grown Alloys for Self-Powered Ultrafast Broadband Photodetection. [PDF]

ACS Appl Mater Interfaces
Perlikowski I, Zielony E, Wierzbicka A, Kaim A, Lysak A, Jakieła R, Zhydachevskyy Y, Przeździecka E.   +7 more
europepmc   +1 more source

Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy. [PDF]

ACS Appl Electron Mater
Jentsch SA, Zscherp MF, Lider V, Winkler F, Beyer A, Belz J, Gimbel NM, Stein M, As DJ, Henss A, Volz K, Chatterjee S, Schörmann J.   +12 more
europepmc   +1 more source

Interfaces in Epitaxially Grown Zn₃P₂ Nanowires and Their Composition-Dependent Optoelectronic Properties for Photovoltaic Applications. [PDF]

Chem Mater
Escobar Steinvall S, Salutari F, Johansson J, Das I, Lehmann S, Church SA, Spadaro MC, Parkinson P, Arbiol J, Dick KA.   +9 more
europepmc   +1 more source

Synthesis of Xenes: physical and chemical methods.

Chem Soc Rev
Molle A, Yuhara J, Yamada-Takamura Y, Sofer Z.   +3 more
europepmc   +1 more source

Yb:CaF2 grown by liquid phase epitaxy

Optical Materials, 2011
Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates.
Peña, Alexandra, Camy, Patrice, Benayad, Abdelmjid, Doualan, Jean-Louis, Maurel, Clément, Olivier, Mélinda, Nazabal, Virginie, Moncorgé, Richard   +7 more
openaire   +3 more sources

Liquid phase epitaxy of Al0.3Ga0.7As islands

Journal of Crystal Growth, 2004
Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has
Sun Jie, Hu Lizhong, Sun Yingchun, Wang Zhaoyang, Zhang Hongzhi   +4 more
openaire   +2 more sources

Liquid Phase Epitaxy of Gallium Nitride

Crystal Growth & Design, 2019
In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films.
Daniel F. Jaramillo-Cabanzo, Jacek B. Jasinski, Mahendra K. Sunkara   +2 more
openaire   +2 more sources

Properties of GaAs : V Grown by Liquid Phase Epitaxy

SPIE Proceedings, 1992
Vanadium doping of GaAs during LPE growth gives rise to an electron trap with an activation energy of 0.19 eV and capture cross section of 4 x 1Ocrn.
Balasubramanian, Sathya, Kumar, V
openaire   +2 more sources