Results 231 to 240 of about 28,350 (278)

Liquid phase epitaxy of Al0.3Ga0.7As islands

Journal of Crystal Growth, 2004
Self-organized Al0.3Ga0.7As islands generated on the (100) facet are achieved by liquid phase epitaxy. Three particularly designed experimental conditions-partial oxidation, deficient solute and air quenching-result in defect-free nucleation. Micron-sized frustums and pyramids are observed by a scanning electron microscope. The sharp end of the tip has
Sun Jie, Hu Lizhong, Sun Yingchun, Wang Zhaoyang, Zhang Hongzhi   +4 more
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Liquid phase epitaxial growth of CuInS2

Thin Solid Films, 1986
Abstract Epitaxial CuInS 2 layers were grown on GaP substrates by liquid phase epitaxy using indium as solvent. Both n- and p-type layers with a wide range of electrical characteristics were obtained at a growth temperature of 805 °C with a cooling rate ranging from 0.6 to 0.8 °C min −1 .
L.W. Chang, J. Gong, C.Y. Sun, H.L. Hwang   +3 more
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Liquid Phase Epitaxy of Gallium Nitride

Crystal Growth & Design, 2019
In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films.
Daniel F. Jaramillo-Cabanzo, Jacek B. Jasinski, Mahendra K. Sunkara   +2 more
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Liquid-Phase Epitaxy

Journal of The Electrochemical Society, 1975
E.A. Giess, R. Ghez
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Liquid Phase Epitaxy of Garnets

1989
Rare earth (R) iron garnets (R3Fe5O12) have excellent properties for magnetic, magneto-optic and microwave applications. For magnetic bubble memory devices requiring single crystal films of several micrometer thickness an epitaxial technique had to be developed.
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Liquid-phase epitaxy over channelled substrates

Journal of Crystal Growth, 1984
Abstract A review is given of liquid-phase epitaxy over channelled substrates, as the major growth technique for the fabrication of mode-stabilized semiconductor diode lasers. After a brief historical overview, the characteristics of LPE over channelled substrates are discussed from a thermodynamic point of view.
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Liquid Phase Epitaxial GaAs Solar Cells

SAE Technical Paper Series, 1984
<div class="htmlview paragraph">Recent progress in the large scale production of GaAs solar cells based on the Hughes-developed infinite solution epitaxy has demonstrated the feasibility for manufacturing the cells at a cost low enough to warrant their application to satellite power systems.
G. S. Kamath, H. Dill
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Liquid Phase Epitaxy and Growth Technology

1996
Liquid-Phase Epitaxy (LPE) has many advantages and is capable of producing reliable semiconductor devices. This chapter provides a detailed description of the equipment necessary for LPE and the epitaxial techniques required for double heterostructures. As discussed in Chap.
Kenichi Iga, Susumu Kinoshita
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Phenomenological Theory on Liquid Phase Epitaxy

Japanese Journal of Applied Physics, 1970
Epitaxial growth of semiconductor crystal from metal-semiconductor solution, particularly the growth of GaAs from Sn-GaAs solution, was analysed on the basis of some simplified assumptions. Formulae were derived for the depth of initial etch back and for the thickness of the grown layer.
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Liquid-Phase Epitaxy of Advanced Materials

2010
The performance of many electronic and optoelectronic devices critically depends on the structural quality and homogeneity of the base material, which is often an epitaxial film grown by either vapor-phase epitaxy (VPE) or liquid-phase epitaxy (LPE).
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