Results 221 to 230 of about 28,350 (278)

Liquid phase epitaxy of hexagonal ferrites

Materials Research Bulletin, 1975
Abstract Single crystal films of the hexagonal ferrite Zn 2 Y, having the chemical formula Ba 2 Zn 2 Fe 12 O 22 , were grown by the isothermal dipping method of liquid phase epitaxy using a PbOBaOB 2 O 3 flux. The substrates were flux-grown M-type hexagonal ferrite crystals having the chemical formula BaFe 12 O 19 .
F.S. Stearns, H.L. Glass
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Liquid phase epitaxial growth of AlGaSb

Journal of Crystal Growth, 1984
Abstract Optimum conditions for the liquid phase epitaxial growth of AlGaSb and for the heat treatment of substrates were investigated. The high-temperature heat treatment of GaSb substrates prior to growth was found to damage the surface of the substrates, resulting in poor interfacial properties and formation of Ga inclusions.
Toshimi Wada, Katsuhiko Kubota, Toshiaki Ikoma   +2 more
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Liquid Phase Epitaxy

2009
Liquid phase epitaxy (LPE) is a growth technique that can be suitable for photovoltaic applications regarding its simplicity and its capacity to produce high-quality thin film. The growth of Silicon proceeds from a molten solution (metal + Si), which is slowly cooled. Temperature range is typically 700–1,000°C and growth rate can be as high as 1 μm min-
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Dopant incorporation during liquid phase epitaxy

Journal of Applied Physics, 1981
A quantitative treatment of nonequilibrium dopant incorporation during the growth by conventional liquid phase epitaxy (LPE) as well as by electroepitaxy has been put forward. Analytical expression for the stationary distribution of dopant concentration and potential in the solid near the liquid metal-semiconductor interface is derived.
K. Mazuruk, T. Bryśkiewicz
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LIQUID PHASE EPITAXY OF MAGNETIC GARNETS

Journal of Crystal Growth, 1975
Abstract In designing rare earth iron garnet compositions for magnetic bubble applications it is usually necessary to deal with no fewer than three cations and often as many as six. LPE has become the dominant process for making garnet films from PbO-B 2 O 3 -Fe 2 O 3 fluxed melts.
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Liquid phase epitaxy of Hg1−xCdxCdxTe

Journal of Crystal Growth, 1982
We describe the epitaxy of n- and p-Hg1−xCdxTe on CdTe substrates up to 2 cm × 3 cm in area, using an atmospheric pressure horizontal slider system with a tellurium-rich growth liquid. Well controlled growth of Hg1−xCdxTe with x values of 0.2, 0.3, and 0.4 is described. Measurements of the semiconductor characteristics of the grown layers are presented.
J.L. Schmit, R.J. Hager, R.A. Wood
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Liquid phase epitaxy of garnets

Journal of Crystal Growth, 1978
Abstract A short introduction to the technique of liquid phase epitaxy of single crystal thin films of magnetic garnets is given with the emphasis on the relative merits of vertical and horizontal dipping. For vertical dipping results are given for the thickness profiles from top to bottom of the samples and the inhomogeneities within the film ...
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Liquid phase epitaxially efficient visible emission from highly doped liquid phase epitaxially grown InP

Applied Physics Letters, 1980
Intense visible photoluminescence emission has been observed in liquid phase epitaxially grown InP layers which were heavily doped with group-VI (S, Se, Te) elements. Up to 3% Se and over 1020 cm−3 n-type carrier concentrations have been measured in such layers which exhibit InP crystal structures and lattice parameter.
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Liquid phase epitaxial growth of SiC

Journal of Crystal Growth, 1999
The characteristics of 4H and 6H-SiC epitaxial growth from the liquid phase by using a sandwich configuration are presented. The preparation procedure of the two-component solvent and the growth technique are described. Growth rates exceeding 300 lm/h have been obtained.
M Syväjärvi, R Yakimova, H.H Radamson, N.T Son, Q Wahab, I.G Ivanov, E Janzén   +6 more
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Nonconservative liquid-phase epitaxy of semiconductors

Soviet Physics Journal, 1988
The kinetics of nonconservative liquid-phase epitaxy of semiconductors with replenishment of the solution in a melt under the action of different applied fields and owing to the internal energy of the system itself are analyzed. The physical-chemical laws governing these processes, which are useful for growing high-quality semiconductor epitaxial ...
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