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Nonconservative liquid-phase epitaxy of semiconductors
Soviet Physics Journal, 1988The kinetics of nonconservative liquid-phase epitaxy of semiconductors with replenishment of the solution in a melt under the action of different applied fields and owing to the internal energy of the system itself are analyzed. The physical-chemical laws governing these processes, which are useful for growing high-quality semiconductor epitaxial ...
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A new method for liquid phase epitaxy
Journal of Crystal Growth, 1976Abstract A new method for liquid phase epitaxy is presented. The method includes the effective cleaning of the semiconductor surface by ion bombardment, followed by vacuum heating of the substrate and the metallic solution. These operations are carried out immediately before the beginning of the growth process, which is conducted in a dynamic high ...
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Liquid phase epitaxy and vapour phase epitaxy of the widegap zinc chalcogenides
1992This review is largely concerned with developments since about 1980. However, for completeness it is instructive to mention the beginnings briefly. The first published work on vapour phase epitaxy (VPE) in vapour flow was in 1970 [1], in which Lilley et al.
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Phenomenological Theory on Liquid Phase Epitaxy
Japanese Journal of Applied Physics, 1970Epitaxial growth of semiconductor crystal from metal-semiconductor solution, particularly the growth of GaAs from Sn-GaAs solution, was analysed on the basis of some simplified assumptions. Formulae were derived for the depth of initial etch back and for the thickness of the grown layer.
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Liquid Phase Epitaxy and Growth Technology
1996Liquid-Phase Epitaxy (LPE) has many advantages and is capable of producing reliable semiconductor devices. This chapter provides a detailed description of the equipment necessary for LPE and the epitaxial techniques required for double heterostructures. As discussed in Chap.
Kenichi Iga, Susumu Kinoshita
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Liquid-Phase Epitaxy of Advanced Materials
2010The performance of many electronic and optoelectronic devices critically depends on the structural quality and homogeneity of the base material, which is often an epitaxial film grown by either vapor-phase epitaxy (VPE) or liquid-phase epitaxy (LPE).
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An alternative method for liquid phase epitaxy
Journal of Crystal Growth, 1974Abstract An alternative liquid phase epitaxial technique has been developed. This technique uses a sandwich consisting of a horizontal set up of a substrate, a metal melt and a cover plate, which is in a temperature gradient in a vertical direction. This method has been applied successfully to both gallium phosphide and silicon epitaxy.
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