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Cryo-Exfoliation Synthesis of Borophene and its Application in Wearable Electronics. [PDF]
Adv Sci (Weinh)Li Z +6 more
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Synthesis of Xenes: physical and chemical methods.
Chem Soc RevMolle A +3 more
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Isothermal liquid phase epitaxy
Progress in Crystal Growth and Characterization, 1983Abstract The epitaxial growth of semiconductor solid solutions from a liquid phase appears to be possible under stringent isothermal conditions. The driving force of such epitaxy can be liquid phase supersaturation caused by isothermal mixing of liquidus solutions or supersaturation in the solid phase resulting from thermodynamic nonequilibrium of ...
V.N. Lozovskii +2 more
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Yb:CaF2 grown by liquid phase epitaxy
Optical Materials, 2011Ytterbium doped CaF2 crystalline layers have been grown for the first time from high temperature solutions at controlled atmosphere by using the liquid phase epitaxy technique. Doped layers having thicknesses between a few microns to a hundred of microns have been grown onto non-oriented and (1 1 1) oriented CaF2 substrates.
Peña, Alexandra +7 more
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Liquid phase epitaxy of AlGaInSb
Journal of Crystal Growth, 1985Abstract Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were ...
E. Lendvay +5 more
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Journal of Crystal Growth, 1997
In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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In the course of producing waveguides for laser applications, liquid phase epitaxy has been used to grow thin films of LiY1 − x − yLnxGdyF4 (Ln = Nd or Er) on LiYF4 substrates. Covered by a LiYF4 cladding layer, waveguides of low optical loss (< 0.3 dB/cm) were obtained.
P. Rogin, J. Hulliger
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Applied Physics A Solids and Surfaces, 1991
This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors. In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described.
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2004
Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Liquid phase epitaxy (LPE) is the deposition from a liquid phase (a solution or melt) of a thin single crystalline layer isostructural with the substrate crystal [5.1]. Usually LPE is performed using a solution as the liquid phase, because this is advantageous against the cases when a melt is used.
Marian A. Herman +2 more
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Vapor phase epitaxial growth of InP on liquid phase epitaxial In0.53Ga0.47As
Journal of Crystal Growth, 1981Abstract Electrical crystal properties of vapor phase epitaxial InP grown on LPE InGaAs film are discussed. The influence of various ambient gases on the InGaAs surface quality is studied at 675°C in an effort to get rid of thermal damage. Thermal deterioration of InGaAs can be suppressed by keeping the substrate in a slidable quartz holder filled ...
Nobuhiko Susa, Yoshiharu Yamauchi
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Epitaxial lateral overgrowth of InP by liquid phase epitaxy
Journal of Crystal Growth, 1995Abstract Epitaxial lateral overgrowth (ELO) of InP has been conducted for the first time by liquid phase epitaxy (LPE). The overgrowth has been studied for seeds in SiO 2 of 2.5 to 7 μm width using starlike and parallel patterns. A wide and flat ELO layer was grown on (001) and (111)B oriented substrates at growth temperature between 773 and 873 K ...
S. Naritsuka, T. Nishinaga
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