Results 51 to 60 of about 67,280 (259)

Ice Lithography for Nanodevices [PDF]

open access: yesNano Letters, 2010
We report the successful application of a new approach, ice lithography (IL), to fabricate nanoscale devices. The entire IL process takes place inside a modified scanning electron microscope (SEM), where a vapor-deposited film of water ice serves as a resist for e-beam lithography, greatly simplifying and streamlining device fabrication.
Branton, Daniel   +4 more
openaire   +5 more sources

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Synthesis and characterization of TeO2-B2O3-CaO-ZnO glass systems for improved radiation shielding performance

open access: yesJournal of Radiation Research and Applied Sciences
This study aims to develop glass materials with enhanced radiation shielding properties with better attenuation performance by combining B2O3-TeO2-ZnO-CaO glasses with a fixed TeO2 content and varying concentrations of B2O3, ZnO, and CaO.
Reem Darwesh   +3 more
doaj   +1 more source

Mask absorber for next generation EUV lithography

open access: yes, 2022
Paper 1151706, 15 S.Novel mask absorber designs are calling attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such optimization [1].
Thakare, D.   +13 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

COPYRIGHT PROTECTED PLASTIC ARTWORK IN THE LIGHT OF THE EUROPEAN AND ROMANIAN LAWS AND THE ARTWORK VALUE RELEVANCE [PDF]

open access: yesChallenges of the Knowledge Society, 2018
The plastic artwork, as a species of the "work of art" genre, is subjected to copyright. However, the law does not define plastic artworks, which are generally included in non-exhaustive listings, in phrases of the types: "plastic or graphical artworks,
Mihai OLARIU
doaj  

Distortion Detection of Lithographic Projection Lenses Based on Wavefront Measurement

open access: yesPhotonics, 2023
As with the decreasing feature size prompted by Moore’s law and the continuous technological advancements in the semiconductor industry, the distortion of the projection lens is an important factor that affects the overlay.
Tian Li   +8 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Fabrication of macroporous polysilicon by using nanosphere lithography

open access: yes, 2007
Nanosphere lithography (NSL) has been demonstrated to be a feasible, alternative technique for the fabrication of macroporous polysilicon. The diameter of the pore can be controlled by RIE of the fabricated nanospheres template using Ar/O gas mixtures at
Melvin, T., Chau, C.F.
core   +1 more source

Hotspot Detection of Semiconductor Lithography Circuits Based on Convolutional Neural Network

open access: yesJournal of Microelectronic Manufacturing, 2018
In the advanced semiconductor lithography manufacturing process, the sub-wavelength lithography gap may cause lithographic error and the difference between the wafer pattern and mask pattern which may cause wafer defects in the later process.
Xingyu Zhou, Youling Yu
doaj   +1 more source

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