Results 101 to 110 of about 4,025,397 (266)
Optimal Inequalities among Various Means of Two Arguments
We establish two optimal inequalities among power mean Mp(a,b)=(ap/2+bp/2)1/p, arithmetic mean A(a,b)=(a+b)/2, logarithmic mean L(a,b)=(a−b)/(loga−logb), and geometric mean G(a,b)=ab.
Ming-yu Shi, Yu-ming Chu, Yue-ping Jiang
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
The escalating concern over global warming has garnered significant international attention, with carbon emission intensity emerging as a crucial barrier to sustainable economic development across various regions.
Tianchun Xiang +6 more
doaj +1 more source
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski +3 more
wiley +1 more source
Full‐Field Damage Monitoring in Architected Lattices Using In situ Electrical Impedance Tomography
In situ electrical impedance tomography (EIT) turns 3D‐printed, CNT‐infused architected lattices into full‐field damage‐imaging systems. Tunable Voronoi‐based geometries act as active sensing architectures, enabling conductivity maps to detect early‐stage damage and localise sequential ligament fracture before catastrophic failure.
Akash Deep +4 more
wiley +1 more source
The aim of this study is to examine the factors influencing changes in the emission of gaseous pollutants in the voivodeships in Poland in the years 2014–2023. The work uses the logarithmic mean method of the Divisia index, also referred to as the LMDI (
Jan Braun
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On an equality of means and a characterization of the logarithmic mean
Abstract Starting from the famous Hermite-Hadamard inequality for $$\varphi $$ φ -convex functions and a ...
openaire +1 more source
On bounds of logarithmic mean and mean inequality chain
An upper bound of the logarithmic mean is given by a convex combination of the arithmetic mean and the geometric mean. In addition, a lower bound of the logarithmic mean is given by a geometric bridge of the arithmetic mean and the geometric mean. In this paper, we study the bounds of the logarithmic mean.
Furuichi, Shigeru +1 more
openaire +3 more sources

