Results 71 to 80 of about 1,405,029 (363)

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Transient Current Responses of Organic Electrochemical Transistors: Evaluating Ion Diffusion, Chemical Capacitance, and Series Elements

Advanced Functional Materials, EarlyView.
This work establishes a general theory of the current transient of ionic‐electronic transistors under a step of gate voltage. The dominant effect is a transient charging of the channel by diffusion of ions. The additional influence of electrolyte capacitance and resistance splits the fundamental time constant of diffusion into two different components.
Juan Bisquert, Nir Tessler
wiley   +1 more source

Gate‐Tunable Hole Transport in In‐Plane Ge Nanowires by V‐Groove Confined Selective Epitaxy

Advanced Functional Materials, EarlyView.
Ge nanowires are promising for hole spin‐based quantum processors, requiring direct integration onto Si wafers. This work introduces V‐groove‐confined selective epitaxy for in‐plane nanowire growth on Si. Structural and low‐temperature transport measurements confirm their high crystalline quality, gate‐tunable hole densities, and mobility.
Santhanu Panikar Ramanandan, Alban Morelle, Michele Masseroni, Shelly Ben‐David, Sara Martí‐Sánchez, Victor Boureau, Alok Rudra, Thomas Ihn, Jordi Arbiol, W. Craig Carter, Klaus Ensslin, Anna Fontcuberta i Morral   +11 more
wiley   +1 more source

Carbon Nanotube 3D Integrated Circuits: From Design to Applications

Advanced Functional Materials, EarlyView.
As Moore's law approaches its physical limits, carbon nanotube (CNT) 3D integrated circuits (ICs) emerge as a promising alternative due to the miniaturization, high mobility, and low power consumption. CNT 3D ICs in optoelectronics, memory, and monolithic ICs are reviewed while addressing challenges in fabrication, design, and integration.
Han‐Yang Liu, Yun Sun, Dong‐Ming Sun, Hui‐Ming Cheng   +3 more
wiley   +1 more source

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

Advanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam, Shaoyang Wang, Nirmal Prashanth Maria Joseph Raj, Qingping Wang, Philip Wijesinghe, Julia Payne, Matthew S. Dyer, Chris Bowen, Lethy Krishnan Jagadamma   +8 more
wiley   +1 more source

Spin‐Selective Anisotropic Magnetoresistance Driven by Chirality in DNA

Advanced Functional Materials, EarlyView.
It is shown that magnetoresistance (MR) measurements carried out as a function of angular dependence between the magnetic field and a chiral (DNA) interface provide a valuable new insight into the charge transport mechanism associated with the chiral‐induced spin selectivity (CISS) effect.
Tapan Kumar Das, Naupada Preeyanka, Suryakant Mishra, Yutao Sang, Claudio Fontanesi   +4 more
wiley   +1 more source

A spin-wave logic gate based on a width-modulated dynamic magnonic crystal [PDF]

, 2015
An electric current controlled spin-wave logic gate based on a width-modulated dynamic magnonic crystal is realized. The device utilizes a spin-wave waveguide fabricated from a single-crystal Yttrium Iron Garnet film and two conducting wires attached to ...
A. Nikitin, A. Ustinov, A. Semenov, A. Chumak, A. Serga, V. Vasyuchka, E. Lahderanta, B. Kalinikos, Burkard Hillebrands St. Petersburg Electrotechnical University, S. Petersburg, Russia., Technische Universitat Kaiserslautern, Kaiserslautern, H Germany, Lappeenranta University of Technology, Lappeenranta, Finland.   +16 more
semanticscholar   +1 more source

Photochromism and molecular logic gate operation of a water-compatible bis-glycosyl diarylethene.

Chemical Communications, 2017
We report the synthesis of a water-compatible bis-glycosyl diarylethene using click chemistry that undergoes photochromism and functions as a molecular logic gate.
Xianzhi Chai, Youxin Fu, T. James, Junji Zhang, Xiao‐Peng He, H. Tian   +5 more
semanticscholar   +1 more source

Ternary Transistors With Reconfigurable Polarities

Advanced Functional Materials, EarlyView.
Polarity‐reconfigurable ternary transistors are demonstrated using black phosphorus homojunction with asymmetric contacts and split‐gate structures. Suppression of majority carrier injection, while Fowler–Nordheim tunneling of low‐density minority carriers persists, enables a well‐defined intermediate state with improved on/off ratios.
Dongju Yeom, Yeonghyeon Ko, Youngkyu Ko, Heungsoon Im, Jungi Song, Yongwook Seok, Hanbyeol Jang, Jaeha Hwang, Seokhun Jin, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +11 more
wiley   +1 more source

Photonic scheme for implementing quantum square root controlled Z gate using phase and intensity encoding of light

IET Optoelectronics, 2021
Quantum logic gate operates on a number of qubits, where a controlled Z gate operates on two qubit data. Similarly, the square root of controlled Z (SRCZ) operates also on two qubit data.
Minakshi Mandal, Sourangshu Mukhopadhyay
doaj   +1 more source