Results 191 to 200 of about 1,602,380 (362)

Targeting DNA‐LNPs to Endothelial Cells Improves Expression Magnitude, Duration, and Specificity

open access: yesAdvanced Science, EarlyView.
Attaching antibodies against endothelial cell surface proteins redirects the delivery and expression of DNA‐lipid nanoparticles to organs of interest. Our targeted nanoparticles enable organ‐selective DNA expression in the endothelium of the lungs, brain, or spleen, providing a therapeutic platform for dozens of endothelial‐centric diseases.
Nicolas Marzolini   +24 more
wiley   +1 more source

Engineering the next generation of CAR T- cells: precision modifications, logic gates and universal strategies to overcome exhaustion and tumor resistance. [PDF]

open access: yesFront Oncol
Garcia-Robledo JE   +11 more
europepmc   +1 more source

Genomic mining of prokaryotic repressors for orthogonal logic gates

open access: green, 2013
Alvin Tamsir   +5 more
openalex   +1 more source

Stimuli‐Responsive Supramolecular Biomaterials for Cancer Theranostics

open access: yesAdvanced Science, EarlyView.
The ultimate goal of cancer theranostics is to get imaging agents and therapeutic cargo to tumor sites when and where they are required. “Smart” systems should be developed. This review discusses the characteristics of physiological stimuli, types and action modes of external stimuli, construction approaches and working principles, as well as ...
Wenting Hu   +4 more
wiley   +1 more source

Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor. [PDF]

open access: yesAdv Sci (Weinh), 2023
Rehman S   +13 more
europepmc   +1 more source

Fast and high-fidelity quantum logic gates with superconducting circuits

open access: green, 2019
Juan José García‐Ripoll   +2 more
openalex   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

open access: yesAdvanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu   +15 more
wiley   +1 more source

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