Results 161 to 170 of about 136,493 (299)

Endocytic Control of Cell‐Autonomous and Non‐Cell‐Autonomous Functions of p53

open access: yesAdvanced Science, EarlyView.
NUMB Ex3‐containing isoforms localize to the plasma membrane, where they recruit p53 through SNX9 and direct it to multivesicular bodies and exosomes. Exported p53 is taken up by neighboring cells and activates nuclear programs, revealing an intercellular, exosome‐based pathway that might help establish a tumor‐suppressive microenvironment.
Roberta Cacciatore   +20 more
wiley   +1 more source

On the Origins of Toughness in Corymbia calophylla (Marri Tree) Nuts

open access: yesAdvanced Science, EarlyView.
We uncover the natural toughening mechanisms of the marri nut, including fiber pullout, crack deflection, and a viscoelastic matrix, which enable exceptional energy absorption and ductility comparable to Teflon, with an elastic modulus similar to acrylic.
Wegood M. Awad   +7 more
wiley   +1 more source

Size‐Modulated Mesoderm‐Endoderm Divergence and Myocardial Cavitation in Micropatterned Cardioids

open access: yesAdvanced Science, EarlyView.
Micropatterned cardioids, CRISPR‐engineered reporter hiPSCs, deep‐tissue imaging, and single‐cell RNA sequencing are integrated to model mesoderm‐endoderm co‐development. Heart‐foregut crosstalk promotes single large cavitation inside cardioids, resembling early heart chamber formation. ABSTRACT The human heart, originating from the splanchnic mesoderm,
Plansky Hoang   +12 more
wiley   +1 more source

Oxide Semiconductor Thin-Film Transistors for Low-Power Electronics. [PDF]

open access: yesAdv Sci (Weinh)
Ren S   +8 more
europepmc   +1 more source

Noise Fingerprints as a Quantitative Order Parameter for Polarization‐ and Defect‐Mediated Switching in Hafnia Ferroelectrics

open access: yesAdvanced Science, EarlyView.
Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo   +8 more
wiley   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

open access: yesAdvanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim   +5 more
wiley   +1 more source

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