Results 131 to 140 of about 2,042,743 (282)
EPJ Web of Conferences, 2018 The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on ...
Useinov Niazbeck
doaj +1 more source
Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions [PDF]
, 2015 © 2014 Elsevier B.V. All rights reserved. The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model.
Useinov N., Tagirov L., Petukhov D.
core
Probabilistic Computing via Gate‐Tunable Random Telegraph Noise
Advanced Science, EarlyView.Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun +8 more
wiley +1 more source
Micro/Nanoscale Acoustic Manipulation: From Particle Control to Autonomous Microswimmers
Advanced Science, EarlyView.This conceptual framework illustrates acoustic technology as a multifunctional platform enabling passive particle manipulation across scales and autonomous propulsion of microswimmers. ABSTRACT Acoustic manipulation and propulsion technologies have emerged as powerful platforms for micro/nanoscale control, enabled by their non‐contact operation, label ...
Jiahui Chu +4 more
wiley +1 more source
Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current. [PDF]
Nano Lett, 2023 Kateel V +12 more
europepmc +1 more source
Advanced Science, EarlyView.Freestanding oxide membranes transform twistronics by enabling deterministic stacking, strain release, and integration with two‐dimensional materials. A unified framework links local atomic registry to structural reconstruction, polar textures, charge modulation, flat bands, and magnetic responses, while identifying the fabrication and characterization
Puneet Kaur, Rahul, Jan‐Chi Yang
wiley +1 more source
Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory. [PDF]
Sci Rep, 2022 Sin S, Oh S.
europepmc +1 more source
Quantum tunneling in magnetic tunneling junctions
Revista de I + D Tecnológico, 2012 This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism.
Cruz de Gracia, Evgeni +4 more
openaire +2 more sources
SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range
Advanced Electronic Materials, EarlyView.A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel +6 more
wiley +1 more source
Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs). [PDF]
Int J Mol Sci, 2022 Dahal BR +4 more
europepmc +1 more source