Results 111 to 120 of about 4,891 (251)
Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential.
Pawan Tyagi
doaj +1 more source
Unconventional spin currents are generated in an antiferromagnetic NiO(110)/Ta/CoFeB trilayer, where the Néel vector governs spin transport. The resulting spin–orbit torques enable deterministic field‐free switching of perpendicular magnetization.
Hyeong‐Joo Seo +12 more
wiley +1 more source
Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance
Giant tunneling magnetoresistance (TMR) has always been a pursuit in the research of magnetic tunnel junctions (MTJ). Two-dimensional (2D) magnetic materials have been used to construct lateral MTJ with high TMR.
Qiu-Qiu Li +5 more
doaj +1 more source
Critical switching current density of magnetic tunnel junction with shape perpendicular magnetic anisotropy through the combination of spin-transfer and spin-orbit torques. [PDF]
Kang DH, Shin M.
europepmc +1 more source
This overview summarizes versatile 2D layered materials for AZIB anodes, cathodes, separators and electrolytes, illustrating their dendrite/side reaction suppression mechanisms, and analyzes existing hurdles to propose scalable commercial research outlooks.
Shuge Dai +7 more
wiley +1 more source
Infrared metasurface‐guided waves (IR‐MGW) scattered by a time interface (TI) induced by rapid, localized free‐carrier generation can be efficiently rectified to generate strong, persistent magnetic fields. We develop a rigorous, theoretical model to study a time‐varying, dispersive medium and uncover the redistribution of the initial energy of the IR ...
Shivaksh Rawat +2 more
wiley +1 more source
Spin state of a single-molecule magnet (SMM) creating long-range ordering on ferromagnetic layers of a magnetic tunnel junction - a Monte Carlo study. [PDF]
Grizzle A +3 more
europepmc +1 more source
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine
A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee +10 more
wiley +1 more source
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser +6 more
wiley +1 more source

