Results 111 to 120 of about 7,606 (295)

Quantum tunneling in magnetic tunneling junctions

Revista de I + D Tecnológico, 2012
This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism.
Cruz de Gracia, Evgeni, Strazzabosco Dorneles, Lucio, Schelp, Luiz Fernando, Ribeiro Teixiera, Sérgio, Baibich, Mario Norberto   +4 more
openaire   +2 more sources

Biolipid Film‐Fused Electrochemiluminescence for Multipurpose In Situ Bioassays

Advanced Science, EarlyView.
An ECL‐emissive, membrane‐interactive scaffold was fabricated, and facilely fused with natural and non‐native phospholipids into multifactorial mimicries of cytomembranes and vesicles for in vitro representative membrane‐process probing. Such a biointerface‐based, state‐sensitive ECL paradigm not only pinpointed proximal phenomena, including channeling
Jialiang Chen, Bin Li, Yingying Wang, Fulin Zhu, Wenxuan Yang, Xuanyu Fu, Tiantian Man, Qiuyue Wu, Kewei Ren, Shengyuan Deng   +9 more
wiley   +1 more source

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

, 2016
International audienceRemanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector.
Djeffal, A., A. Djeffal, X. F. Han, S. Mangin, J.-M. George, B. S. Tao, P. Barate, Barate, Philippe, Y. Lu, Xu, B., Marie, Xavier, George, J. M., Z. G. Wang, Han, X. F., Wang, Z. G., X. Marie, Tao, B., J. Frougier, Petit-Watelot, S., B. Xu, Lu, Y., S. Petit-Watelot, P. Renucci, H. Jaffrès, Mangin, S., Jaffres, H., Renucci, Pierre, Frougier, J.   +27 more
core   +1 more source

Spin transfer torque driven higher-order propagating spin waves in nano-contact magnetic tunnel junctions

Nature Communications, 2018
Nano-contact-based spin wave generation may enable high-frequency magnonic devices but has been limited to long wavelengths and weak signal strengths.
A. Houshang, R. Khymyn, H. Fulara, A. Gangwar, M. Haidar, S. R. Etesami, R. Ferreira, P. P. Freitas, M. Dvornik, R. K. Dumas, J. Åkerman   +10 more
doaj   +1 more source

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Scientific Reports, 2020
Ever since the first observation of all-optical switching of magnetization in the ferrimagnetic alloy GdFeCo using femtosecond laser pulses, there has been significant interest in exploiting this process for data-recording applications.
L. Avilés-Félix, A. Olivier, G. Li, C. S. Davies, L. Álvaro-Gómez, M. Rubio-Roy, S. Auffret, A. Kirilyuk, A. V. Kimel, Th. Rasing, L. D. Buda-Prejbeanu, R. C. Sousa, B. Dieny, I. L. Prejbeanu   +13 more
doaj   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

, 2012
A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on
Z. M. Zeng（曾中明）, J. Langer, H. W. Jiang, P. Khalili Amiri, K. L. Wang, J. A. Katine   +5 more
core  

MODELS OF SPIN TORQUE USING SELF-CONSISTENT SOLUTIONS OF THE MAGNETISATION AND SPIN ACCUMULATION [PDF]

, 2013
A model of spin accumulation (m) is proposed to develop theoretical approaches to calculate the m in any arbitrary magnetic structure. The model is based on generalising the approach of Zhang, Levy and Fert (PRL 88, 236601, 2002).
Chureemart, Phanwadee
core  

Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

, 2004
We present switching characteristics of patterned submicrometer magnetic tunnel junction arrays containing NiFe and CoFe free layers. The resemblance of magnetization and magnetoresistance (MR) curves was studied by micromagnetic calculations and ...
Kim, Young Keun, Kim, Taewan, Lee, Kyung-Jin, K. J. Lee, Young Keun Kim, Park, Wanjun, Wanjun Park, I. J. Hwang, Taewan Kim, Hwang, IJ   +9 more
core   +1 more source

Temperature‐Resilient Reconfigurable Physical Unclonable Function Driven by Pulse Modulation Using CMOS‐Integrated Spintronic Chips

Advanced Science, EarlyView.
A reconfigurable physical unclonable function is developed using CMOS‐integrated SOT‐MRAM chips, leveraging a dual‐pulse strategy and offering enhanced environmental robustness. A temperature‐compensation effect arising from the CMOS transistor and SOT‐MTJ is revealed and established as a key prerequisite for thermal resilience.
Min Wang, Chuanpeng Jiang, Zhaohao Wang, Zhengyi Hou, Zhongkui Zhang, Yuanfu Zhao, Hong‐xi Liu, Weisheng Zhao   +7 more
wiley   +1 more source