Results 101 to 110 of about 2,169,866 (198)

Magnetic tunnel junction device having an intermediate layer [PDF]

, 2001
\u3cp\u3eA magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers.
Oepts, W.
core  

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

, 2016
International audienceRemanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector.
Djeffal, A., A. Djeffal, X. F. Han, S. Mangin, J.-M. George, B. S. Tao, P. Barate, Barate, Philippe, Y. Lu, Xu, B., Marie, Xavier, George, J. M., Z. G. Wang, Han, X. F., Wang, Z. G., X. Marie, Tao, B., J. Frougier, Petit-Watelot, S., B. Xu, Lu, Y., S. Petit-Watelot, P. Renucci, H. Jaffrès, Mangin, S., Jaffres, H., Renucci, Pierre, Frougier, J.   +27 more
core   +1 more source

Quantum tunneling in magnetic tunneling junctions

Revista de I + D Tecnológico, 2012
This paper reports on the study of ferromagnetic tunneling junctions produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier and quantum tunneling as the charge transport mechanism.
Cruz de Gracia, Evgeni, Strazzabosco Dorneles, Lucio, Schelp, Luiz Fernando, Ribeiro Teixiera, Sérgio, Baibich, Mario Norberto   +4 more
openaire   +2 more sources

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs). [PDF]

Int J Mol Sci, 2022
Dahal BR, Grizzle A, D'Angelo C, Lamberti V, Tyagi P.   +4 more
europepmc   +1 more source

MAGNETIC TUNNEL JUNCTION MODEL BASED UNIVERSAL NAND AND NOR LOGIC GATES

, 2017
<p>We have presented here magnetic tunnel junction (MTJ) model based universal NAND and NOR logic gates and studied the proposed universal gates by both experimental and simulation methods. Experimental results substantiates with both the simulated
Joyanto Roy Choudhary*, Sumitesh Majumder, T K Maiti
core   +1 more source

Fabrication and Characterization of Microstructured Magnetic Tunnel Junction Rings

, 2013
[[abstract]]Microstructured magnetic tunnel junction rings have been fabricated by a top-down technique combining electron beam lithography and ion milling process.
Chen, C. C. ; Chang, C. C. ; Kuo, C. Y. ; Horng, Lance; Wu, J. C. ; Wu, Te-Ho ; Chern, G. ; Huang, C. Y. ; Tsunoda, M. ; Takahashi, M., Chen, C. C. ; Chang, C. C. ; Kuo, C. Y. ; Horng, Lance; Wu, Jong-Ching; Wu, Te-Ho; Chern, G. ; Huang, C. Y. ; Tsunoda, M. ; Takahashi, M., Chen, C. C. ; Chao, C. T. ; Kuo, C. Y. ; Wu, Te-Ho; Chen, G. ; Huang, C. Y. ; Horng, Lance; Wu, Jong-Ching   +2 more
core  

A high magnetic field sensor based on magnetic tunnel junctions

, 2004
We used an in-plane magnetized electrode and a perpendicular to film plane magnetized multilayer electrode in a magnetic tunnel junction to generate the active part of a magnetic field sensor able to measure large fields. When the applied field is normal
A. Schuhl, M. Hehn, G. Malinowski, E. Jouguelet, Sajieddine, M., Jouguelet, E., Malinowski, G., M. Sajieddine, Hehn, Michel, Schuhl, A.   +9 more
core   +1 more source

Magnetic force microscopy revealing long-range room temperature stable molecule bridge-induced magnetic ordering on magnetic tunnel junction (MTJ) pillars

AIP Advances
Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential.
Pawan Tyagi
doaj   +1 more source

Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance

Nano Research
Giant tunneling magnetoresistance (TMR) has always been a pursuit in the research of magnetic tunnel junctions (MTJ). Two-dimensional (2D) magnetic materials have been used to construct lateral MTJ with high TMR.
Qiu-Qiu Li, Zhi-Fu Duan, Wen-Wen Liu, Rong Yang, Bo Li, Ke-Qiu Chen   +5 more
doaj   +1 more source

Advanced HSPICE macromodel for magnetic tunnel junction

, 2018
Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance.
신형순, 이승준
core   +1 more source