Results 81 to 90 of about 2,169,866 (198)
Liebing N, Serrano-Guisan S, Rott K, et al. Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars. Journal of Applied Physics.
Langer, J. +13 more
core +1 more source
Skyrmion-Induced Memristive Magnetic Tunnel Junction for Ternary Neural Network
Novel skyrmion-magnetic tunnel junction (SK-MTJ) devices were investigated for the first time to implement the ternary neural networks (TNN). In the SK-MTJ, an extra magnetoresistance state beyond binary parallel and anti-parallel MTJ states was achieved
Biao Pan +8 more
doaj +1 more source
Interfacial Density of States in Magnetic Tunnel Junctions
Physical Review ...
LeClair, P.R. +3 more
openaire +3 more sources
United States Department of Energy Grand Junction Office Report GJBX 112(81)
Average record data listings taken during aerial gamma-ray and magnetic surveys of the Grand Junction quadrangle in Colorado ...
Geodata International
core +1 more source
Shapiro like steps reveals molecular nanomagnets’ spin dynamics
We present an accurate way to detect spin dynamics of a nutating molecular nanomagnet by inserting it in a tunnel Josephson junction and studying the current voltage (I-V) characteristic.
Babak Abdollahipour +2 more
doaj +1 more source
Nano-contact-based spin wave generation may enable high-frequency magnonic devices but has been limited to long wavelengths and weak signal strengths.
A. Houshang +10 more
doaj +1 more source
Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy [PDF]
We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%.
Wiśniowski, P. +4 more
core +1 more source
Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer
A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on
Z. M. Zeng(曾中明) +5 more
core
Magnetic switching and magnetoresistance in nanoscale spin tunnel junctions
Co/AlOx/Co magnetic tunnel junctions in both multijunction arrays and double-tunnel junction geometries have been studied. The junctions exhibit magnetoresistance (MR) and change their resistance by similar to10% depending on the relative magnetic ...
V. Korenivski +5 more
core +1 more source
The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy ...
Nafeesa Rahman, Rachid Sbiaa
doaj +1 more source

