Results 81 to 90 of about 7,606 (295)
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field.
N. Ohshima +6 more
doaj +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved.
B. Fang +4 more
doaj +1 more source
Super‐Resolution Ultrasound Based Cell Tracking With Polymeric Nanobubbles
This study presents a super‐resolution ultrasound platform for tracking cells in vivo. Biocompatible polymeric nanobubbles are used as highly echogenic intracellular labels. Following the injection of cells and microbubbles, ultrasound localization microscopy (ULM) can dynamically match the microvascular architecture and individual cell trajectories ...
Junlin Chen +19 more
wiley +1 more source
Perpendicular anisotropy in magnetic tunnel junctions
Kugler Z. Perpendicular anisotropy in magnetic tunnel junctions.
Kugler, Zoe
core
Investigation of carbon nanotube quantum dots connected to ferromagnetic leads [PDF]
The implementation of ferromagnetic contacts in complex nanoelectronic devices, e.g. in spin-valves bears great potential for applications and fundamental investigations. Spin-valves are structures with two magnetic contacts and a non-magnetic medium (
Samm, Julia
core +1 more source
A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT-MTJ
The spin transfer tunnel magnetic tunnel junction (STT-MTJ) has been widely used in computers, memory, and other fields because of its nonvolatility, low power consumption, and high capacity for integration, attracting significant attention in recent ...
Wu Jianyu, Zheng Yifei, Zhang Hongli
doaj +1 more source
Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode
In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR).
Y. Goto +4 more
doaj +1 more source
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu +8 more
wiley +1 more source
Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction
Böhnke A, Walter M, Roschewsky N, et al. Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction. Review of Scientific Instruments.
Niklas Roschewsky +21 more
core +1 more source

