Results 71 to 80 of about 2,042,743 (282)

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

npj 2D Materials and Applications
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi, Avijeet Ray, Nirpendra Singh, Udo Schwingenschlögl   +3 more
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Voltage-controlled magnetic anisotropy effect through a high-k MgO/ZrO2/MgO hybrid tunneling barrier

Applied Physics Express
We investigated the voltage-controlled magnetic anisotropy (VCMA) effect in epitaxial magnetic tunnel junctions (MTJs) with a hybrid MgO/ZrO _2 /MgO tunnel barrier.
Hiroshige Onoda, Tomohiro Nozaki, Takayuki Nozaki, Shinji Yuasa   +3 more
doaj   +1 more source

Magnetoresistance and ion bombardment induced magnetic patterning [PDF]

, 2008
Höink V. Magnetoresistance and ion bombardment induced magnetic patterning. Bielefeld (Germany): Bielefeld University; 2008.In this thesis the combination of the magnetic patterning of the unidirectional anisotropy and the tunnel magnetoresistance effect
Höink, Volker
core  

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

Advanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian, Wentao Shan, Rachael Found, Paola Mantegazza, Francesco Leoni, Andreas W. Erhardt, Yuyun Yao, Matus Stredansky, Arianna Magni, Adam Marks, Elena Chulanova, Zeinab Hamid, Yueying Huang, Wanpeng Lu, Xian'e Li, Baopu Zhang, Qingpei Wan, Christina Kousseff, Matilde Concilio, Ruth Theresia Arwani, Caroline A. Ross, Sahika Inal, Giovanni Costantini, Iain McCulloch   +23 more
wiley   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics

Nature Communications
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization
Wenkai Zhu, Ziao Wang, Tiangui Hu, Zakhar R. Kudrynskyi, Tong Zhou, Zakhar D. Kovalyuk, Ce Hu, Hailong Lin, Xiaodong Li, Yongcheng Deng, Quanshan Lv, Lixia Zhao, Amalia Patanè, Igor Žutić, Houzhi Zheng, Kaiyou Wang   +15 more
doaj   +1 more source

Improving the Gain and Bandwidth of CMOS Circuits with Fe-MgO Tunnel Junctions

Electronics
This paper reports the influence of magnetic tunnel junctions on the electrical response of an operational amplifier (op-amp) circuit. As a baseline, the pure-CMOS operational amplifier has been designed using the 180 nm semiconductor process ...
Mayank Chakraverty, Valayathoor Ramakrishnan   +1 more
doaj   +1 more source

Molybdenum Disulfide Bilayers Hybridized With Reduced Graphene Oxide Nanosheets for Enhanced Hydrogen Evolution Reaction

Advanced Materials Interfaces, EarlyView.
The integration of reduced graphene oxide nanosheet‐hybridized molybdenum disulfide bilayers to enhance hydrogen evolution reaction capabilities unveils thrilling opportunities for strain engineering, defect manipulation, and sophisticated twist‐angle assemblies with 2D heterostructures.
Bruno Ferreira Brischi, Gabriela Frajtag, João Pedro da Silva Mariano, Laís Fernanda Medeiros Ruela, Gustavo Duarte Verçosa, Camila Desiderio Fernandes, Murilo Santhiago, Letícia Mariê Minatogau Ferro, Leandro Merces   +8 more
wiley   +1 more source

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Nanomaterials
This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with ...
Tatiana Moposita, Esteban Garzón, Adam Teman, Marco Lanuzza   +3 more
doaj   +1 more source

High-dose X-ray radiation induced MgO degradation and breakdown in spin transfer torque magnetic tunnel junctions

Scientific Reports, 2022
Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core element of spin transfer torque-based magnetic random access memory. For the application in the space environment, the total ionizing dose radiation effects on MTJs need
Qi He, Hui Shi, Yinquan Wang, Lichao Cao, Xiang Gu, Jianwei Wu, Genshen Hong, Minghua Li   +7 more
doaj   +1 more source