Results 71 to 80 of about 2,169,866 (198)

Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

AIP Advances, 2019
In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR).
Y. Goto, T. Yanase, T. Shimada, M. Shirai, T. Nagahama   +4 more
doaj   +1 more source

Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction

, 2013
Böhnke A, Walter M, Roschewsky N, et al. Time-resolved measurement of the tunnel magneto-Seebeck effect in a single magnetic tunnel junction. Review of Scientific Instruments.
Niklas Roschewsky, Reiss, Guenter, Roschewsky, Niklas, Marvin Walter, Boehnke, Alexander, Drewello, Volker, Walter, Marvin, Muenzenberg, Markus, Volker Drewello, Rott, Karsten, Eggebrecht, Tim, Tim Eggebrecht, Thomas, Andy ; https://orcid.org/, Karsten Rott, Andy Thomas, Reiss, Günter ; https://orcid.org/, Alexander Boehnke, Günter Reiss, Muenzenberg, Markus G., Thomas, Andy, Böhnke, Alexander, Markus Münzenberg   +21 more
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A quantum-well magnetic tunnel junction [PDF]

Science, 2017
Physics Magnetic tunnel junctions, which are essential to the function of hard drive read heads in modern computers, allow current to pass when the spins of their two ferromagnetic layers are pointing in the same direction. Eisenstein et al. built a magnetic tunnel junction out of much more exotic components: a bilayer of GaAs quantum wells, each ...
openaire   +2 more sources

Tunnel Junction with Perpendicular Magnetic Anisotropy: Status and Challenges

Micromachines, 2015
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications.
Mengxing Wang, Yue Zhang, Xiaoxuan Zhao, Weisheng Zhao   +3 more
doaj   +1 more source

Characterization of magnetic tunnel junction test pads [PDF]

, 2015
We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance ...
Petersen, Dirch Hjorth, Daniel Kjær, Ole Hansen, Østerberg, Frederik Westergaard, Frederik Westergaard Østerberg, Peter Folmer Nielsen, Hansen, Ole, Dirch Hjorth Petersen, Kjær, Daniel, Nielsen, Peter Folmer   +9 more
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Enhanced tunneling magnetoresistance and thermal stability in magnetic tunnel junctions with multiple CoFeB/Ta interfaces

Scientific Reports
We present a comparative study of perpendicular magnetic tunnel junctions (p-MTJs) incorporating either a single CoFeB free layer or a double free layer structure consisting of two 1.2 nm CoFeB layers separated by a 0.3 nm Ta spacer.
S. Amara, W. Al Saidi, F. Al Ma’Mari, G. Setti, R. Sbiaa   +4 more
doaj   +1 more source

Size Dependence of Magnetization Reversal of Ring Shaped Magnetic Tunnel Junction

, 2013
[[abstract]]The size dependence of magnetization reversal of magnetic tunnel junction (MTJ) rings has been investigated. The MTJ rings, with outer diameter of 4, 2 and 1 μm and inner diameter of 1.5, 1 and 0.5 μm were fabricated by a top–down technique ...
Chen, C. C. ; Kuo, C. Y. ; Chang, Y. C. ; Chang, C. C. ; Horng, Lance; Wu, Te-Ho; Chern, G. ; Huang, C. Y. ; Tsunoda, M. ; Takahashi, M. ; Wu, Jong-Ching, Chen, C. C. ; Kuo, C. Y. ; Chang, Y. C. ; Chang, C. C. ; Horng, Lance; Wu, Te-Ho; Chern, G. ; Huang, C. Y. ; Tsunoda, M. ; Takahashi, M. ; Wu, J. C.   +1 more
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Inverse tunneling magnetoresistance in nanoscale magnetic tunnel junctions [PDF]

Physical Review B, 2005
11 pages, 4 figures, To be published in Phys. Rev. B (in press)
openaire   +2 more sources

Bolometric Properties of a Spin-Torque Diode Based on a Magnetic Tunnel Junction

Advances in Condensed Matter Physics, 2019
Spin caloritronics opens up a wide range of potential applications, one of which can be the thermoelectric rectification of a microwave signal by spin-diode structures. The bolometric properties of a spin-torque diode based on a magnetic tunnel junction (
G. D. Demin, K. A. Zvezdin, A. F. Popkov
doaj   +1 more source

A Dual Magnetic Tunnel Junction‐Based Neuromorphic Device

, 2020
With the advent of artificial intelligence (AI) in computational devices technology, various synaptic array architectures are proposed for neuromorphic computing applications. Among them, the non-volatile memory (NVM) architectures are very promising for
Khizroev, Sakhrat, You, Long, Jeongmin Hong, Xin Li, Long You, Jeffrey Bokor, Nuo Xu, Sakhrat Khizroev, Stefano Cabrini, Li, Xin, Cabrini, Stefano, Chen, Hong, Xu, Nuo, Bokor, Jeffrey, Hong, Jeongmin, Hong Chen   +15 more
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