Results 51 to 60 of about 2,169,866 (198)

Magnetic field sensor comprising a spin-tunnel junction [PDF]

, 1999
A magnetic field sensor comprising a transducer element (1), whereby: (I) the transducer element (1) is a Spin Tunnel Junction, comprising a first (1a) and second (1b) magnetic layer which are sandwiched about an interposed electrical insulator layer (1c)
Ruigrok, Jacobus Josephus Maria, Coehoorn, Reinder, van der Zaag, Pieter Jan; id_orcid   +2 more
core   +4 more sources

The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers

Communications Materials
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures.
Alex. S. Jenkins, Leandro Martins, Luana C. Benetti, Alejandro Schulman, Pedro Anacleto, Marcel S. Claro, Ihsan Caha, Francis Leonard Deepak, Elvira Paz, Ricardo Ferreira   +9 more
doaj   +1 more source

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

Journal of Superconductivity and Novel Magnetism, 2011
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ...
Useinov, Arthur, Useinov, Niazbeck Kh H, Tagirov, Lenar R., Kosel, Jürgen   +3 more
openaire   +5 more sources

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

npj 2D Materials and Applications
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi, Avijeet Ray, Nirpendra Singh, Udo Schwingenschlögl   +3 more
doaj   +1 more source

Magnetic field dependent noise in magnetic tunnel junction

, 2002
The measurements of voltage fluctuations at room temperature are performed for magnetic tunnel junction, patterned by photolithography to have 20x10 mum(2) in junction area.
Cho, Beong Ki, Jin-Tae Kim, K. S. Kim, H. J. Shim, B. K. Cho, Shim, HJ, Seok, JH, Kim, JT, J. H. Seok, I. J. Hwang, Hwang, IJ, Kim, KS   +11 more
core   +1 more source

Voltage-controlled magnetic anisotropy effect through a high-k MgO/ZrO2/MgO hybrid tunneling barrier

Applied Physics Express
We investigated the voltage-controlled magnetic anisotropy (VCMA) effect in epitaxial magnetic tunnel junctions (MTJs) with a hybrid MgO/ZrO _2 /MgO tunnel barrier.
Hiroshige Onoda, Tomohiro Nozaki, Takayuki Nozaki, Shinji Yuasa   +3 more
doaj   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics

Nature Communications
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization
Wenkai Zhu, Ziao Wang, Tiangui Hu, Zakhar R. Kudrynskyi, Tong Zhou, Zakhar D. Kovalyuk, Ce Hu, Hailong Lin, Xiaodong Li, Yongcheng Deng, Quanshan Lv, Lixia Zhao, Amalia Patanè, Igor Žutić, Houzhi Zheng, Kaiyou Wang   +15 more
doaj   +1 more source

Improving the Gain and Bandwidth of CMOS Circuits with Fe-MgO Tunnel Junctions

Electronics
This paper reports the influence of magnetic tunnel junctions on the electrical response of an operational amplifier (op-amp) circuit. As a baseline, the pure-CMOS operational amplifier has been designed using the 180 nm semiconductor process ...
Mayank Chakraverty, Valayathoor Ramakrishnan   +1 more
doaj   +1 more source

The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System

, 2012
Krzysteczko P, Münchenberger J, Schäfers M, Reiss G, Thomas A. The Memristive Magnetic Tunnel Junction as a Nanoscopic Synapse-Neuron System. Advanced Materials.
Patryk Krzysteczko, Markus Schäfers, Andy Thomas, Jana Münchenberger, Günter Reiss, Münchenberger, Jana, Thomas, Andy ; https://orcid.org/, Schäfers, Markus, Reiss, Günter ; https://orcid.org/, Krzysteczko, Patryk   +9 more
core   +1 more source

Cryo-SIMPLY: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Nanomaterials
This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with ...
Tatiana Moposita, Esteban Garzón, Adam Teman, Marco Lanuzza   +3 more
doaj   +1 more source