Results 51 to 60 of about 2,042,743 (282)
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Silicon spin diffusion transistor: materials, physics and device characteristics
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C +4 more
core +2 more sources
Broadband spin-filtered minimalistic magnetic tunnel junction
The tri-layer magnetic tunnel junction (MTJ) has surfaced as a building block for engineering next-generation integrated circuits while combining the attributes of non-volatility and meager energy consumption.
Sabarna Chakraborti +3 more
doaj +1 more source
Hybrid Spintronics/CMOS Logic Circuits Using All-Optical-Enabled Magnetic Tunnel Junction
Spintronics is one of the emerging fields for next-generation low power, high endurance, non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit torque (SOT), and electric field assisted switching mechanisms have been ...
Surya Narain Dikshit +4 more
doaj +1 more source
Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto +4 more
wiley +1 more source
Spin Torque Oscillator for High Performance Magnetic Memory
A study on spin transfer torque switching in a magnetic tunnel junction with perpendicular magnetic anisotropy is presented. The switching current can be strongly reduced under a spin torque oscillator (STO), and its use in addition to the conventional ...
Rachid Sbiaa, Khaled Bouziane
doaj +1 more source
Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source
We study magneto-electric effect in two systems: i) multiferroic tunnel junction (MFTJ) - magnetic tunnel junction with ferroelectric barrier and ii) granular multiferroic (GMF) in which ferromagnetic (FM) metallic grains embedded into ferroelectric ...
O. G. Udalov, I. S. Beloborodov
doaj +1 more source
Integration of tunneling magnetoresistive sensors for high resolutive magnetic particle detection [PDF]
Albon C. Integration of tunneling magnetoresistive sensors for high resolutive magnetic particle detection. Bielefeld (Germany): Bielefeld University; 2009.The development of nanotechnology pushes the limits of biomedicine in regions where the size of ...
Albon, Camelia
core
This study presents a magneto‐mechanical strategy that incorporates FP@MSCs into an aligned PCL/GelMA nerve guidance conduit. Magnetic stimulation increases membrane tension in FP@MSCs, triggering cytoskeletal remodeling, Schwann cell‐like differentiation, and TIMP1 secretion. TIMP1 activates ITGB1/CD63–FAK signaling in NE‐4C cells, increasing membrane
Xinyu Zhu +14 more
wiley +1 more source

