Results 31 to 40 of about 2,169,866 (198)
Perpendicular anisotropy in magnetic tunnel junctions [PDF]
, 2012 Kugler Z. Perpendicular anisotropy in magnetic tunnel junctions.
Kugler, Zoe
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Materials Today, 2006 Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlO x - and TiO x -based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature.
Zhu, Jian-Gang (Jimmy), Park, Chando
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Kondo Effect in Magnetic Tunnel Junctions [PDF]
Physical Review Letters, 2007 Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures.
Lee, KI +10 more
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Dielectric reliability and spin dependent transport in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions [PDF]
, 2011 Khan AA. Dielectric reliability and spin dependent transport in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions. Bielefeld (Germany): Bielefeld University; 2011.The experiments described in this thesis relate to the recently emerging and rapidly growing ...
Khan, Ayaz Arif
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Spin and charge transport in a magnetic tunnel junction with magnetic impurities embedded in the tunnel barrier [PDF]
, 2015 Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic impurity atoms/molecules embedded in the barrier is studied theoretically.
Misiorny, M. +5 more
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Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions [PDF]
Physical Review Letters, 2020 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized ...
Meng Xu +13 more
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Half-metallic Heusler alloy/AlP based magnetic tunnel junction
AIP AdvancesExploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices.
Kaifang Qu, Qiyun Xie, Wei Wang
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AIP Advances, 2020 Recently, two-dimensional (2D) materials have attracted considerable interest for use in spintronic applications, especially hexagonal close-packed (hcp)-phase boron nitride (BN) as a tunnel barrier.
Chaoyi Peng +5 more
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Grazing Incidence X-ray Scattering from Magnetic Thin Films and Nanostructures [PDF]
, 2009 Grazing incidence scattering of synchrotron x-rays has been used to characterize the structure of magnetic thin films and periodic nanostructures. The combined metal and metal oxide films have been chosen to clarify the effects of growth processing ...
Eastwood, David Samuel +1 more
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Unified analytical model for switching behavior of magnetic tunnel junction
, 2017 Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching ...
신형순, 이승준
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