Results 31 to 40 of about 2,042,743 (282)
Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling
AIP Advances, 2017 The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy +2 more
doaj +1 more source
Optimizing free layer of Magnetic Tunnel Junction for true random number generator
Memories - Materials, Devices, Circuits and Systems, 2023 True random number generators (TRNGs) should ideally generate lengthy chains of non-repeating, uncorrelated bit-streams that are efficient in terms of both energy and area.
Alisha P.B., Dr. Tripti S Warrier
doaj +1 more source
Hybrid magnetic tunnel junction/spin filter device [PDF]
, 2008 Surfaces and interfaces of complex oxides materials provide a rich playground for the exploration of novel magnetic properties not found in the bulk but also the development of functional interfaces to be incorporated into applications.
Nelson-Cheeseman, B. +11 more
core +1 more source
Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles [PDF]
IEEE Transactions on Magnetics, 2015 4 pages, 5 ...
Useinov A. +4 more
openaire +6 more sources
Frontiers in Materials, 2021 In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been ...
Nilay Maji, Subhasis Shit, T. K. Nath
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Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
Applied Sciences, 2022 Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck +7 more
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Nature Communications, 2019 Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen +15 more
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Perpendicular anisotropy in magnetic tunnel junctions [PDF]
, 2012 Kugler Z. Perpendicular anisotropy in magnetic tunnel junctions.
Kugler, Zoe
core
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Materials Today, 2006 Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlO x - and TiO x -based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature.
Zhu, Jian-Gang (Jimmy), Park, Chando
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