Results 31 to 40 of about 7,606 (295)
Flexible MgO Barrier Magnetic Tunnel Junctions [PDF]
Adv. Mat. (2016)
Loong, Li Ming +7 more
openaire +3 more sources
Hybrid magnetic tunnel junction/spin filter device [PDF]
Surfaces and interfaces of complex oxides materials provide a rich playground for the exploration of novel magnetic properties not found in the bulk but also the development of functional interfaces to be incorporated into applications.
Nelson-Cheeseman, B. +11 more
core +1 more source
In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been ...
Nilay Maji, Subhasis Shit, T. K. Nath
doaj +1 more source
Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck +7 more
doaj +1 more source
Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ...
Useinov, Arthur +3 more
openaire +5 more sources
The development of magnetic tunnel junction fabrication techniques
The discovery of large, room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM ...
core +1 more source
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen +15 more
doaj +1 more source
Security Protection for Magnetic Tunnel Junction
Energy efficiency is one of the most important parameters for designing and building a computing system nowadays. Introduction of new transistor and memory technologies to the integrated circuits design have brought hope for low energy very large scale integration (VLSI) circuit design.
Shayan Taheri, Jiann-Shiun Yuan
openaire +2 more sources
In this explorative study, the abundance of circular RNA molecules in bone marrow stem cells was found to be elevated in patients with high‐risk myelodysplastic neoplasms, and to be associated with an increased risk of progression to acute myeloid leukemia.
Eileen Wedge +17 more
wiley +1 more source
Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick
Snoeck, E. +4 more
core +1 more source

