Results 31 to 40 of about 7,606 (295)

Flexible MgO Barrier Magnetic Tunnel Junctions [PDF]

open access: yesAdvanced Materials, 2016
Adv. Mat. (2016)
Loong, Li Ming   +7 more
openaire   +3 more sources

Hybrid magnetic tunnel junction/spin filter device [PDF]

open access: yes, 2008
Surfaces and interfaces of complex oxides materials provide a rich playground for the exploration of novel magnetic properties not found in the bulk but also the development of functional interfaces to be incorporated into applications.
Nelson-Cheeseman, B.   +11 more
core   +1 more source

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

open access: yesFrontiers in Materials, 2021
In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been ...
Nilay Maji, Subhasis Shit, T. K. Nath
doaj   +1 more source

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

open access: yesApplied Sciences, 2022
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck   +7 more
doaj   +1 more source

Resonant Tunnel Magnetoresistance in a Double Magnetic Tunnel Junction

open access: yesJournal of Superconductivity and Novel Magnetism, 2011
We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ...
Useinov, Arthur   +3 more
openaire   +5 more sources

The development of magnetic tunnel junction fabrication techniques

open access: yes, 2005
The discovery of large, room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM ...

core   +1 more source

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

open access: yesNature Communications, 2019
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen   +15 more
doaj   +1 more source

Security Protection for Magnetic Tunnel Junction

open access: yesIJIREEICE, 2017
Energy efficiency is one of the most important parameters for designing and building a computing system nowadays. Introduction of new transistor and memory technologies to the integrated circuits design have brought hope for low energy very large scale integration (VLSI) circuit design.
Shayan Taheri, Jiann-Shiun Yuan
openaire   +2 more sources

Circular RNA expression landscapes in myelodysplastic neoplasms: Associations with mutational signatures and disease progression

open access: yesMolecular Oncology, EarlyView.
In this explorative study, the abundance of circular RNA molecules in bone marrow stem cells was found to be elevated in patients with high‐risk myelodysplastic neoplasms, and to be associated with an increased risk of progression to acute myeloid leukemia.
Eileen Wedge   +17 more
wiley   +1 more source

Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application

open access: yes, 2002
Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick
Snoeck, E.   +4 more
core   +1 more source

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