Results 11 to 20 of about 7,606 (295)

Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

Electronics Letters, 2021
This letter presents magnetic tunnel junction based spintronic devices completely implemented in a hybrid semiconductor process that comprises a complementary metal oxide semiconductor and a magnetic tunnel junction technology.
Rui Ma, Ahmed Sidi El Valli, Martin Kreißig, Gregory Di Pendina, Florian Protze, Ursula Ebels, Guillaume Prenat, Antoine Chavent, Vadym Iurchuk, Ricardo Sousa, Laurent Vila, Frank Ellinger, Jürgen Langer, Jerzy Wrona, Ioan‐Lucian Prejbeanu   +14 more
doaj   +2 more sources

Tunneling Magnetothermopower in Magnetic Tunnel Junction Nanopillars [PDF]

Physical Review Letters, 2011
Revised version containing additional data and analyis.
Liebing, N., Serrano-Guisan, S., Rott, Karsten, Reiss, Günter, Langer, J., Ocker, B., Schumacher, H. W.   +6 more
openaire   +4 more sources

Tunneling spectroscopy of magnetic tunnel junctions

, 2010
In this thesis, magnetic tunnel junctions based on MgO barriers have been prepared and investigated. Different aspects were discussed, in order to understand the physical limitations to the TMR ratio of the MTJs and, hence, their performance as a basis of spintronic devices.
Drewello, Volker
openaire   +3 more sources

Skyrmions in Magnetic Tunnel Junctions [PDF]

ACS Applied Materials & Interfaces, 2018
4 figure in main text,14 figure in the supplementary ...
Xueying Zhang, Wenlong Cai, Xichao Zhang, Zilu Wang, Zhi Li, Yu Zhang, Kaihua Cao, Na Lei, Wang Kang, Yue Zhang, Haiming Yu, Yan Zhou, Weisheng Zhao   +12 more
openaire   +3 more sources

Tunneling magnetothermopower in magnetic tunnel junctions [PDF]

Physical Review B, 2014
Thermally induced spin-dependent transport across magnetic tunnel junctions (MTJs) is theoretically investigated. We analyze the thermal analog of Slonczewski's model (as well as its limiting case—Julliere's model) of tunneling magnetoresistance and obtain analytical expressions for the junction thermopower and the tunneling magnetothermopower (TMT ...
Lopez-Monis, Carlos, Matos-Abiague, Alex, Fabian, Jaroslav   +2 more
openaire   +3 more sources

Seebeck effect in magnetic tunnel junctions [PDF]

Nature Materials, 2011
Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect.
Walter, Marvin, Walowski, Jakob, Zbarsky, Vladyslav, Münzenberg, Markus, Schäfers, Markus, Ebke, Daniel, Reiss, Günter, Thomas, Andy, Peretzki, Patrick, Seibt, Michael, Moodera, Jagadeesh S., Czerner, Michael, Bachmann, Michael, Heiliger, Christian   +13 more
openaire   +4 more sources

Easy axis anisotropy creating high contrast magnetic zones on magnetic tunnel junctions based molecular spintronics devices (MTJMSD)

Scientific Reports, 2022
Magnetic tunnel junction-based molecular spintronics device (MTJMSD) may enable novel magnetic metamaterials by chemically bonding magnetic molecules and ferromagnets (FM) with a vast range of magnetic anisotropy.
Bishnu R. Dahal, Marzieh Savadkoohi, Andrew Grizzle, Christopher D’Angelo, Vincent Lamberti, Pawan Tyagi   +5 more
doaj   +1 more source

Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Communications Materials, 2022
Voltage-controlled magnetic random-access memory is promising for high-performance computing applications. Here, a perpendicular magnetic tunnel junction structure with high voltage-controlled magnetic anisotropy coefficient is developed, allowing sub ...
Yixin Shao, Victor Lopez-Dominguez, Noraica Davila, Qilong Sun, Nicholas Kioussis, Jordan A. Katine, Pedram Khalili Amiri   +6 more
doaj   +1 more source

Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles [PDF]

IEEE Transactions on Magnetics, 2015
4 pages, 5 ...
Useinov A., Useinov N., Ye L., Wu T., Lai C.   +4 more
openaire   +6 more sources

Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions [PDF]

Physical Review Letters, 2020
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized ...
Meng Xu, Mingen Li, Pravin Khanal, Ali Habiboglu, Blake Insana, Yuzan Xiong, Thomas Peterson, Jason C. Myers, Deborah Ortega, Hongwei Qu, C. L. Chien, Wei Zhang, Jian-Ping Wang, W. G. Wang   +13 more
openaire   +3 more sources