Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions
Communications Materials, 2022 Voltage-controlled magnetic random-access memory is promising for high-performance computing applications. Here, a perpendicular magnetic tunnel junction structure with high voltage-controlled magnetic anisotropy coefficient is developed, allowing sub ...
Yixin Shao +6 more
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Seebeck effect in magnetic tunnel junctions [PDF]
Nature Materials, 2011 Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, i.e., the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect.
Walter, Marvin +13 more
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Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy [PDF]
Materials, 2016 Weisheng Zhao +2 more
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The development of magnetic tunnel junction fabrication techniques [PDF]
, 2005 The discovery of large, room temperature magnetoresistance (MR) in magnetic tunnel junctions in 1995 sparked great interest in these devices. Their potential applications include hard disk read head sensors and magnetic random access memory (MRAM ...
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Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application [PDF]
, 2002 Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick
Snoeck, E. +4 more
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Nature Communications, 2018 Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories.
Mengxing Wang +13 more
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Perpendicular magnetic anisotropy and its electrical control in FeNiB ultrathin films
AIP Advances, 2021 We study the perpendicular magnetic anisotropy in (Fe100−xNix)80B20 (FeNiB) films with various Ni contents. Perpendicularly magnetized films are achieved when the Ni content is in the range of 30 at. %–70 at. %.
Tatsuya Yamamoto +6 more
doaj +1 more source
Magnetoresistance of galfenol-based magnetic tunnel junction
AIP Advances, 2015 The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors.
B. Gobaut +10 more
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Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review
Molecules, 2023 Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance.
Dereje Seifu +5 more
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Characterization of nano-oxide layers fabricated by ion beam oxidation [PDF]
, 2002 In this paper, a remote O2 ion source is used for the formation of nano-oxide layers. The oxidation efficiency was measured in CoFe-oxide films, and a decrease of the oxide layer with the pan angle and the oxidation pressure is observed.
Susana Cardoso +15 more
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