Results 21 to 30 of about 7,606 (295)
Non-uniform superlattice magnetic tunnel junctions
Nanotechnology, 2023 Abstract We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the linear, Gaussian, Lorentzian, and Pöschl–Teller width and height based profiles manifesting a sizable enhancement in the TMR (≈104 − 106%) with a significant suppression in the switching bias (≈9 folds) owing to the physics of broad ...
Sabarna Chakraborti, Abhishek Sharma
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Nature Communications, 2018 Perpendicular magnetic tunnel junctions with large tunnel magnetoresistance and low junction resistance are promising for the magnetic random access memories.
Mengxing Wang +13 more
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Optimizing free layer of Magnetic Tunnel Junction for true random number generator
Memories - Materials, Devices, Circuits and Systems, 2023 True random number generators (TRNGs) should ideally generate lengthy chains of non-repeating, uncorrelated bit-streams that are efficient in terms of both energy and area.
Alisha P.B., Dr. Tripti S Warrier
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Kondo Effect in Magnetic Tunnel Junctions [PDF]
Physical Review Letters, 2007 Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures.
Lee, KI +10 more
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Perpendicular magnetic anisotropy and its electrical control in FeNiB ultrathin films
AIP Advances, 2021 We study the perpendicular magnetic anisotropy in (Fe100−xNix)80B20 (FeNiB) films with various Ni contents. Perpendicularly magnetized films are achieved when the Ni content is in the range of 30 at. %–70 at. %.
Tatsuya Yamamoto +6 more
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Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review
Molecules, 2023 Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance.
Dereje Seifu +5 more
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Stability of magnetic tunnel junctions [PDF]
Journal of Magnetism and Magnetic Materials, 2002 When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process.
R. Kinder +6 more
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Magnetoresistance of galfenol-based magnetic tunnel junction
AIP Advances, 2015 The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors.
B. Gobaut +10 more
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Materials Today, 2006 Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlO x - and TiO x -based magnetic tunnel junctions that exhibit a large magnetoresistive effect at room temperature.
Zhu, Jian-Gang (Jimmy), Park, Chando
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Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling
AIP Advances, 2017 The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy +2 more
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