Results 21 to 30 of about 4,891 (251)

Magnetoresistance of galfenol-based magnetic tunnel junction

AIP Advances, 2015
The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors.
B. Gobaut, G. Vinai, C. Castán-Guerrero, D. Krizmancic, H. Rafaqat, S. Roddaro, G. Rossi, G. Panaccione, M. Eddrief, M. Marangolo, P. Torelli   +10 more
doaj   +1 more source

Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

AIP Advances, 2017
The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy, Janine Splettstoesser, Maciej Misiorny   +2 more
doaj   +1 more source

Optimizing free layer of Magnetic Tunnel Junction for true random number generator

Memories - Materials, Devices, Circuits and Systems, 2023
True random number generators (TRNGs) should ideally generate lengthy chains of non-repeating, uncorrelated bit-streams that are efficient in terms of both energy and area.
Alisha P.B., Dr. Tripti S Warrier
doaj   +1 more source

Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles [PDF]

IEEE Transactions on Magnetics, 2015
4 pages, 5 ...
Useinov A., Useinov N., Ye L., Wu T., Lai C.   +4 more
openaire   +6 more sources

Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device

Frontiers in Materials, 2021
In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been ...
Nilay Maji, Subhasis Shit, T. K. Nath
doaj   +1 more source

Strontium Ferromolybdate-Based Magnetic Tunnel Junctions

Applied Sciences, 2022
Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck, Evgenii Artiukh, Nikolai A. Sobolev, Eugene Telesh, Nikolay Kalanda, Dmitry A. Kiselev, Tatiana S. Ilina, Gerald Gerlach   +7 more
doaj   +1 more source

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Nature Communications, 2019
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen, Yan Wen, Bin Fang, Yuelei Zhao, Qiang Zhang, Yuansi Chang, Peisen Li, Hao Wu, Haoliang Huang, Yalin Lu, Zhongming Zeng, Jianwang Cai, Xiufeng Han, Tom Wu, Xi-Xiang Zhang, Yonggang Zhao   +15 more
doaj   +1 more source

Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions [PDF]

Physical Review Letters, 2020
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly-magnetized ...
Meng Xu, Mingen Li, Pravin Khanal, Ali Habiboglu, Blake Insana, Yuzan Xiong, Thomas Peterson, Jason C. Myers, Deborah Ortega, Hongwei Qu, C. L. Chien, Wei Zhang, Jian-Ping Wang, W. G. Wang   +13 more
openaire   +3 more sources

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Investigation on the structural property of the sputtered hcp-phase boron nitride tunnel barrier for spintronic applications

AIP Advances, 2020
Recently, two-dimensional (2D) materials have attracted considerable interest for use in spintronic applications, especially hexagonal close-packed (hcp)-phase boron nitride (BN) as a tunnel barrier.
Chaoyi Peng, Shaoqian Yin, Delin Zhang, Xiaohui Chao, P. Quarterman, Jian-Ping Wang   +5 more
doaj   +1 more source