Results 21 to 30 of about 2,169,866 (198)
Magnetoresistance of galfenol-based magnetic tunnel junction
AIP Advances, 2015 The manipulation of ferromagnetic layer magnetization via electrical pulse is driving an intense research due to the important applications that this result will have on memory devices and sensors.
B. Gobaut +10 more
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Perpendicular magnetic anisotropy and its electrical control in FeNiB ultrathin films
AIP Advances, 2021 We study the perpendicular magnetic anisotropy in (Fe100−xNix)80B20 (FeNiB) films with various Ni contents. Perpendicularly magnetized films are achieved when the Ni content is in the range of 30 at. %–70 at. %.
Tatsuya Yamamoto +6 more
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Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review
Molecules, 2023 Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance.
Dereje Seifu +5 more
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Optimizing free layer of Magnetic Tunnel Junction for true random number generator
Memories - Materials, Devices, Circuits and Systems, 2023 True random number generators (TRNGs) should ideally generate lengthy chains of non-repeating, uncorrelated bit-streams that are efficient in terms of both energy and area.
Alisha P.B., Dr. Tripti S Warrier
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Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling
AIP Advances, 2017 The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy +2 more
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Tunnel Magnetoresistance in Magnetic Tunnel Junctions With Embedded Nanoparticles [PDF]
IEEE Transactions on Magnetics, 2015 4 pages, 5 ...
Useinov A. +4 more
openaire +6 more sources
Frontiers in Materials, 2021 In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure device has been optimized using the pulsed laser deposition (PLD) technique, and a detailed investigation of its structural, electrical, and magnetic features has been ...
Nilay Maji, Subhasis Shit, T. K. Nath
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Low-resistance spin-dependent tunnel junctions with HfAlOx barriers for high-density recording-head application [PDF]
, 2002 Spin-dependent tunnel junctions with the structure (Ta 70 /spl Aring//NiFe 70 /spl Aring//MnIr 80 /spl Aring//CoFe 35 /spl Aring//HfAlO/sub x//CoFe 35 /spl Aring//NiFe 40 /spl Aring//TiW(N) 150 /spl Aring/) were fabricated on top of 600-/spl Aring/-thick
Snoeck, E. +4 more
core +1 more source
Strontium Ferromolybdate-Based Magnetic Tunnel Junctions
Applied Sciences, 2022 Thin-film strontium ferromolybdate is a promising material for applications in room-temperature magnetic tunnel junction devices. These are spin-based, low-power-consuming alternatives to CMOS in non-volatile memories, comparators, analog-to-digital ...
Gunnar Suchaneck +7 more
doaj +1 more source
Nature Communications, 2019 Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen +15 more
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