Results 61 to 70 of about 2,169,866 (198)
Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core element of spin transfer torque-based magnetic random access memory. For the application in the space environment, the total ionizing dose radiation effects on MTJs need
Qi He +7 more
doaj +1 more source
Flux-gate like 2D magnetometer based on a single magnetic tunnel junction
The pick-up coil of a conventional flux-gate sensor has been replaced by a magnetic tunnel junction. With this respect, the magnetic properties of tunnel junctions have been optimized to be relevant to flux-gate operation i.e.
M. Hehn +17 more
core +1 more source
We present switching characteristics of patterned submicrometer magnetic tunnel junction arrays containing NiFe and CoFe free layers. The resemblance of magnetization and magnetoresistance (MR) curves was studied by micromagnetic calculations and ...
Kim, Young Keun +9 more
core +1 more source
A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT-MTJ
The spin transfer tunnel magnetic tunnel junction (STT-MTJ) has been widely used in computers, memory, and other fields because of its nonvolatility, low power consumption, and high capacity for integration, attracting significant attention in recent ...
Wu Jianyu, Zheng Yifei, Zhang Hongli
doaj +1 more source
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field.
N. Ohshima +6 more
doaj +1 more source
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved.
B. Fang +4 more
doaj +1 more source
Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications.
Zhenhu Jin +4 more
doaj +1 more source
Security Protection for Magnetic Tunnel Junction
Energy efficiency is one of the most important parameters for designing and building a computing system nowadays. Introduction of new transistor and memory technologies to the integrated circuits design have brought hope for low energy very large scale integration (VLSI) circuit design.
Shayan Taheri, Jiann-Shiun Yuan
openaire +2 more sources
Modeling and validation of magnetic tunnel junction device
We have presented here a simple model of magnetic tunnel junction(MTJ)device and the proposed MTJ model is utilized for validation purpose and also to study its tunnel magneto-resistance(TMR)effect by both simulation and experimental method using an ...
Joyanto Roychoudhary +2 more
doaj
Atomistic Model of Magnetic Tunnel Junction Spin-Torque Nano-Oscillators
We have developed a model of a CoFeB/MgO magnetic tunnel junction nano-pillar for application as a spin torque nano-oscillator (MTJ-STNO) using an atomistic model combined with a spin accumulation model.
Ratthaphong Rangngoen +5 more
doaj +1 more source

