Results 61 to 70 of about 7,606 (295)
Interfacial Density of States in Magnetic Tunnel Junctions
Physical Review ...
LeClair, P.R. +3 more
openaire +3 more sources
Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi +4 more
wiley +1 more source
Silicon spin diffusion transistor: materials, physics and device characteristics
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C +15 more
core +1 more source
Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens +8 more
wiley +1 more source
The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures.
Alex. S. Jenkins +9 more
doaj +1 more source
Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core element of spin transfer torque-based magnetic random access memory. For the application in the space environment, the total ionizing dose radiation effects on MTJs need
Qi He +7 more
doaj +1 more source
Kondo effect in magnetic tunnel junctions with an AlO x tunnel barrier [PDF]
The influence of the magnetization configuration on Kondo effect in magnetic tunnel junction is investigated. In the parallel configuration, an additional resistance contribution (R*) below 40 K exhibits a logarithmic temperature dependence, indicating the presence of Kondo effect.
ZHENG, C +3 more
openaire +4 more sources
Resolving the Structural Duality of Graphene Grain Boundaries
Cantilever ncAFM resolves the atomic structure of grain boundaries in graphene, revealing coexisting stable and metastable types. Both contain pentagon/heptagon defects, but metastable GBs show irregular geometries. Modeling shows metastable GBs form under compression, exhibiting vertical corrugation, while stable GBs are flat.
Haojie Guo +11 more
wiley +1 more source
Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi +3 more
doaj +1 more source
Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications.
Zhenhu Jin +4 more
doaj +1 more source

