Results 61 to 70 of about 4,891 (251)

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field

AIP Advances, 2017
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field.
N. Ohshima, H. Sato, S. Kanai, J. Llandro, S. Fukami, F. Matsukura, H. Ohno   +6 more
doaj   +1 more source

Security Protection for Magnetic Tunnel Junction

IJIREEICE, 2017
Energy efficiency is one of the most important parameters for designing and building a computing system nowadays. Introduction of new transistor and memory technologies to the integrated circuits design have brought hope for low energy very large scale integration (VLSI) circuit design.
Shayan Taheri, Jiann-Shiun Yuan
openaire   +2 more sources

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT-MTJ

IET Circuits, Devices and Systems
The spin transfer tunnel magnetic tunnel junction (STT-MTJ) has been widely used in computers, memory, and other fields because of its nonvolatility, low power consumption, and high capacity for integration, attracting significant attention in recent ...
Wu Jianyu, Zheng Yifei, Zhang Hongli
doaj   +1 more source

A quantum-well magnetic tunnel junction [PDF]

Science, 2017
Physics Magnetic tunnel junctions, which are essential to the function of hard drive read heads in modern computers, allow current to pass when the spins of their two ferromagnetic layers are pointing in the same direction. Eisenstein et al. built a magnetic tunnel junction out of much more exotic components: a bilayer of GaAs quantum wells, each ...
openaire   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode

AIP Advances, 2019
In magnetic tunnel junctions (MTJs), the tunnel resistance varies as a function of the relative magnetic configuration of the electrode, in an effect called tunnel magnetoresistance (TMR).
Y. Goto, T. Yanase, T. Shimada, M. Shirai, T. Nagahama   +4 more
doaj   +1 more source

Detection of Small Magnetic Fields Using Serial Magnetic Tunnel Junctions with Various Geometrical Characteristics

Sensors, 2020
Thanks to their high magnetoresistance and integration capability, magnetic tunnel junction-based magnetoresistive sensors are widely utilized to detect weak, low-frequency magnetic fields in a variety of applications.
Zhenhu Jin, Yupeng Wang, Kosuke Fujiwara, Mikihiko Oogane, Yasuo Ando   +4 more
doaj   +1 more source

Origin of Dark Current Robustness in Photomultiplication Organic Photodetectors Enabled by Ionic Conjugated Electron‐Blocking Layers

Advanced Materials, EarlyView.
Ionic conjugated polyelectrolyte electron‐blocking layers enable photomultiplication organic photodetectors with dark current robustness up to −10 V and external quantum efficiencies exceeding 3000%. Fowler–Nordheim tunneling, interfacial dipole, trap density of states, and noise analyses reveal how ionic conjugated polyelectrolytes suppress electron ...
Yelim Kang, Min Hun Jee, Shuai Zhang, Sang Heon Lee, Jung Min Ha, Xingchao Zhao, Xiaoling Ma, Huiseong Shin, Changhwan Shin, Soonyong Lee, Fujun Zhang, Jae Won Shim, Han Young Woo   +12 more
wiley   +1 more source