Results 91 to 100 of about 2,042,743 (282)
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Modeling and validation of magnetic tunnel junction device
Journal of Measurement Science and Instrumentation, 2017 We have presented here a simple model of magnetic tunnel junction（MTJ）device and the proposed MTJ model is utilized for validation purpose and also to study its tunnel magneto-resistance（TMR）effect by both simulation and experimental method using an ...
Joyanto Roychoudhary +2 more
doaj
Atomistic Model of Magnetic Tunnel Junction Spin-Torque Nano-Oscillators
IEEE AccessWe have developed a model of a CoFeB/MgO magnetic tunnel junction nano-pillar for application as a spin torque nano-oscillator (MTJ-STNO) using an atomistic model combined with a spin accumulation model.
Ratthaphong Rangngoen +5 more
doaj +1 more source
AIP Advances, 2015 We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved.
B. Fang +4 more
doaj +1 more source
A quantum-well magnetic tunnel junction [PDF]
Science, 2017 Physics Magnetic tunnel junctions, which are essential to the function of hard drive read heads in modern computers, allow current to pass when the spins of their two ferromagnetic layers are pointing in the same direction. Eisenstein et al. built a magnetic tunnel junction out of much more exotic components: a bilayer of GaAs quantum wells, each ...
openaire +2 more sources
Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers
Advanced Science, EarlyView.Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han +17 more
wiley +1 more source
Unified analytical model for switching behavior of magnetic tunnel junction
, 2017 Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM); spin-transfer torque (STT); switching ...
신형순, 이승준
core +1 more source
Ferroelectric Devices for In‐Memory and In‐Sensor Computing
Advanced Science, EarlyView.Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang +5 more
wiley +1 more source
Fluxgate Principle Applied to a Magnetic Tunnel Junction for Weak Magnetic Field Sensing
, 2011 Breth L, Dimopoulos T, Schotter J, Rott K, Brueckl H, Suess D. Fluxgate Principle Applied to a Magnetic Tunnel Junction for Weak Magnetic Field Sensing. IEEE Transactions on Magnetics.
H. Bruckl +13 more
core +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Advanced Science, EarlyView.Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source