Results 121 to 130 of about 7,606 (295)
UNIPOLAR MAGNETOELECTRIC MAGNETIC TUNNEL JUNCTION
A magneto - electric magnetic tunnel junction device (ME-MTJ) that permits direct driving of ME-MTJ devices by a prior ME-MTJ device is the unipolar magneto-electric magnetic tunnel junction (UMMTJ) device.
Sharma, Nishtha +2 more
core
Tunnel Magnetoresistance Sensors with Magnetostrictive Electrodes: Strain Sensors
Magnetostrictive tunnel magnetoresistance (TMR) sensors pose a bright perspective in micro- and nano-scale strain sensing technology. The behavior of TMR sensors under mechanical stress as well as their sensitivity to the applied stress depends on the ...
Ali Tavassolizadeh +6 more
doaj +1 more source
High glucose triggers corneal endothelial dysfunction by impairing FOXO1‐mediated ITPR1 transcription, leading to disrupted mitochondria‐associated membrane (MAM) integrity and defective ER‐to‐mitochondria Ca2+ transfer. This study develops an innovative viscous DES‐AAV‐Foxo1 delivery system with enhanced transfection efficiency. This non‐invasive gene
Hongran Zhao +10 more
wiley +1 more source
Single‐cell and spatial profiling of 110 human thoracic aortic samples reveals a stromal–immune circuit driving aortic dissection. An elastin‐rich fibroblast subset is depleted with age and markedly reduced in disease, weakening aortic wall integrity.
Jing Tao +25 more
wiley +1 more source
Magnetic field sensor comprising a spin-tunnel junction [PDF]
A magnetic field sensor comprising a transducer element (1), whereby: (I) the transducer element (1) is a Spin Tunnel Junction, comprising a first (1a) and second (1b) magnetic layer which are sandwiched about an interposed electrical insulator layer (1c)
Ruigrok, Jacobus Josephus Maria +2 more
core +2 more sources
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device
[[abstract]]The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The
Chen, C. C. ; Wang, Y. R. ; Kuo, C. Y. ; Wu, J. C. ; Horng, Lance; Wu, Te-Ho; Yoshimura, S. ; Tsunoda, M. ; Takahashi, M. +1 more
core
Ultra-low electron temperatures in nanostructured samples [PDF]
Nanostructured samples, be it semiconducting or metallic ones, have received considerable experimental and theoretical attention due to the manifold of possibilities to investigate fundamental physics. Not only are they viable candidates for realizations
Casparis, Lucas
core +1 more source
A fully compensated synthetic antiferromagnet (SAF) multilayer exhibits a uniform state at zero field, without skyrmions. We use a SAF bias system to provide RKKY‐mediated exchange bias to the SAF multilayer, promoting zero‐field skyrmion stabilization and polarity control.
Emily Darwin +5 more
wiley +1 more source
The theoretical model of spin-dependent transport in magnetic tunnel junctions (MTJ) containing magnetic or non-magnetic nanoparticle is developed. The dependences of tunnel magnetoresistance (TMR) and in-plane component of spin transfer torque (STT) on ...
Useinov Niazbeck
doaj +1 more source

