Results 121 to 130 of about 2,042,743 (282)

The Switching Characteristics of Free Layer of Patterned Magnetic Tunnel Junction Device

open access: yes, 2013
[[abstract]]The free layer switching properties of microstructured magnetic tunnel junctions have been investigated. The M–H loop of nonpatterned film shows ferromagnetic coupling with 10 Oe shifting associated with the interlayer roughness coupling. The
Chen, C. C. ; Wang, Y. R. ; Kuo, C. Y. ; Wu, J. C. ; Horng, Lance; Wu, Te-Ho; Yoshimura, S. ; Tsunoda, M. ; Takahashi, M.   +1 more
core  

Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

open access: yes, 2016
International audienceRemanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector.
Djeffal, A.   +27 more
core   +1 more source

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

open access: yesAdvanced Science, EarlyView.
This study employs cryogenic magneto‐terahertz nanoscopy to reveal the real‐space electrodynamics of the colossal magnetoresistance transition. By capturing the terahertz electrodynamic evolution of field‐driven spin switching, the work unveils the dissipative dynamics of emergent metallic states, providing a high‐frequency view of coupled spin‐charge ...
Samuel Haeuser   +6 more
wiley   +1 more source

Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

open access: yesSultan Qaboos University Journal for Science
The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy ...
Nafeesa Rahman, Rachid Sbiaa
doaj   +1 more source

Voltage‐Reconfigurable Magneto‐Ionic Nanolayers in Dot Arrays for Probabilistic, Materials‐Engineered Security Primitives

open access: yesAdvanced Science, EarlyView.
A magneto‐ionic security‐by‐materials‐design strategy exploits voltage‐driven N3– migration in selectively contacted FeCoN dots, creating reconfigurable sub‐15 nm ferromagnetic sublayers with deterministic and/or probabilistic (single‐domain↔vortex) states, voltage‐tunable probabilities and fully stochastic orientation/chirality.
Irena Spasojevic   +4 more
wiley   +1 more source

Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings

open access: yes, 2013
[[abstract]]Controllable remanent states have been studied on the microstructured magnetic tunnel junction (MTJ) rings through magnetoresistance measurements.
Chen, C. C. ; Chao, C. T. ; Kuo, C. Y. ; Horng, Lance; Wu, Te-Ho; Chern, G. ; Huang, C. Y. ; Isogami, S. ; Tsunoda, M. ; Takahashi, M. ; Wu, J. C.   +1 more
core  

Differential Tissue‐Coupled Powering for Battery‐Free Injectable Electroceuticals

open access: yesAdvanced Science, EarlyView.
A thread‐like injectable neural stimulator is powered through differential tissue‐coupled powering (DTCP), which harvests RF‐frequency tissue potentials with an elongated receiver while preserving a injectable cross‐section. The system integrates an ASIC, stimulation electrodes, and a portable transmitter, enabling wireless peripheral nerve stimulation,
Han Wu   +13 more
wiley   +1 more source

Gestational Hypoxia Disrupts Medial Ganglionic Eminence Progenitor Dynamics and Interneuron Development in Schizophrenia

open access: yesAdvanced Science, EarlyView.
FES‐derived MGE spheroids exhibit progenitor‐stage alterations in developmental trajectory and hypoxia‐responsive transcriptional programs, followed by functional disruption. Gestational hypoxia recapitulates impaired progenitor proliferation, shortened cell‐cycle progression, interneuron developmental abnormalities, and schizophrenia‐like behaviors in
Peiyan Ni   +17 more
wiley   +1 more source

Probing Type‐II Multiferroicity in Monolayer NiBr2

open access: yesAdvanced Science, EarlyView.
Type‐II multiferroicity is demonstrated in monolayer NiBr2. Scanning tunneling microscopy resolves ferroelectric polarization arising from non‐collinear magnetic order, and reciprocal control with electric and magnetic fields confirms intrinsic magnetoelectric coupling.
Aleš Cahlík   +7 more
wiley   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

open access: yesAdvanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee   +3 more
wiley   +1 more source

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