Results 141 to 150 of about 7,606 (295)

Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics

Advanced Electronic Materials, EarlyView.
Surface‐energy guided self‐assembly of liquid metals enables the transformation of liquid metal micro/nanodroplets into continuous perocolative films on elastomeric substrates. By tailoring interfacial energetics and wetting behavior, uniform, conductive, and stretchable films are achieved, offering scalable pathways for high‐performance soft ...
Alwar Samy Ramasamy, Gayatri Subhalaxmi, Sneha Banerjee, Mark Vailshery, Renu Raman Sahu, Sivakumar K.S, Ajisha Chathyattu, Tapajyoti Das Gupta   +7 more
wiley   +1 more source

Voltage controlled exchange stiffness and magnetic anisotropy in CoFeB characterized by spin waves excitation in magnetic tunnel junction

, 2017
Voltage control of magnetic properties in metallic ferromagnets is attracting much attention because of its potential to be a key technology in the production of ultralow energy consumption spintronic devices.
Yakushiji, K., Miwa, S., Kubota, H., Suzuki, Y., You, Chun-Yeol, Yuasa, S., Cho, J, Fukushima, A.   +7 more
core  

Flux-gate like 2D magnetometer based on a single magnetic tunnel junction

, 2005
The pick-up coil of a conventional flux-gate sensor has been replaced by a magnetic tunnel junction. With this respect, the magnetic properties of tunnel junctions have been optimized to be relevant to flux-gate operation i.e.
M. Hehn, Hébrard, L., Sajieddine, M., J.-B. Kammerer, Malinowski, G., A. Schuhl, G. Malinowski, F. Braun, E. Jouguelet, Jouguelet, E., Braun, F., L. Hébrard, Alnot, P., P. Alnot, Kammerer, J.B., M. Sajieddine, Schuhl, A., Hehn, M.   +17 more
core   +1 more source

Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory. [PDF]

Sci Rep, 2022
Sin S, Oh S.
europepmc   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Spin and charge transport in a magnetic tunnel junction with magnetic impurities embedded in the tunnel barrier

, 2015
Electronic transport in a nanoscopic magnetic tunnel junction with magnetic particles or magnetic impurity atoms/molecules embedded in the barrier is studied theoretically.
Misiorny, M., Misiorny, Maciej,, Barnaś, J., Barnaś, Jozef, Misiorny, Maciej, Barnaś, Jozef,   +5 more
core   +1 more source

Competing Easy-Axis Anisotropies Impacting Magnetic Tunnel Junction-Based Molecular Spintronics Devices (MTJMSDs). [PDF]

Int J Mol Sci, 2022
Dahal BR, Grizzle A, D'Angelo C, Lamberti V, Tyagi P.   +4 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Magnetic force microscopy revealing long-range room temperature stable molecule bridge-induced magnetic ordering on magnetic tunnel junction (MTJ) pillars

AIP Advances
Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential.
Pawan Tyagi
doaj   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source