Results 141 to 150 of about 2,042,743 (282)

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Charge and spin current oscillations in a tunnel junction induced by magnetic field pulses

, 2016
CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOUsually, charge and spin transport properties in tunnel junctions are studied in the DC bias regime and/or in the adiabatic regime of time-varying magnetic fields.
Nobrega, K. Z., Cabrera, G. G., Dartora, C. A.   +2 more
core   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

Magnetic force microscopy revealing long-range room temperature stable molecule bridge-induced magnetic ordering on magnetic tunnel junction (MTJ) pillars

AIP Advances
Magnetic tunnel junctions (MTJs) can integrate novel single molecular device elements to overcome long-standing fabrication challenges, thus unlocking their novel potential.
Pawan Tyagi
doaj   +1 more source

Tunnel magnetoresistance in asymmetric double-barrier magnetic tunnel junctions

, 2020
© 2014 Elsevier B.V. All rights reserved. The spin-polarized tunnel conductance and tunnel magnetoresistance (TMR) through a planar asymmetric double-barrier magnetic tunnel junction (DBMTJ) have been calculated using quasi-classical model.
Useinov N., Tagirov L., Petukhov D.
core  

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Two-dimensional lateral magnetic tunnel junction with ultrahigh tunneling magnetoresistance

Nano Research
Giant tunneling magnetoresistance (TMR) has always been a pursuit in the research of magnetic tunnel junctions (MTJ). Two-dimensional (2D) magnetic materials have been used to construct lateral MTJ with high TMR.
Qiu-Qiu Li, Zhi-Fu Duan, Wen-Wen Liu, Rong Yang, Bo Li, Ke-Qiu Chen   +5 more
doaj   +1 more source

Voltage controlled exchange stiffness and magnetic anisotropy in CoFeB characterized by spin waves excitation in magnetic tunnel junction

, 2017
Voltage control of magnetic properties in metallic ferromagnets is attracting much attention because of its potential to be a key technology in the production of ultralow energy consumption spintronic devices.
Yakushiji, K., Miwa, S., Kubota, H., Suzuki, Y., You, Chun-Yeol, Yuasa, S., Cho, J, Fukushima, A.   +7 more
core  

Advancing Energy Materials by In Situ Atomic Scale Methods

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss, Michael Seibt, Martin Wenderoth, Oliver Bünermann, Ole Bunjes, Till Domröse, Christian Eckel, Francesca Falorsi, Christoph Flathmann, Monica Kolek Martinez de Azagra, Matthias Krüger, Jonas Lindner, Tobias Meyer, Claus Ropers, Ulrich Ross, Kai Rossnagel, Sreeju Sreekantan Nair Lalithambika, Simone Techert, Georg A. Traeger, Cynthia Volkert, R. Thomas Weitz, Alec M. Wodtke   +21 more
wiley   +1 more source

Flux-gate like 2D magnetometer based on a single magnetic tunnel junction

, 2005
The pick-up coil of a conventional flux-gate sensor has been replaced by a magnetic tunnel junction. With this respect, the magnetic properties of tunnel junctions have been optimized to be relevant to flux-gate operation i.e.
M. Hehn, Hébrard, L., Sajieddine, M., J.-B. Kammerer, Malinowski, G., A. Schuhl, G. Malinowski, F. Braun, E. Jouguelet, Jouguelet, E., Braun, F., L. Hébrard, Alnot, P., P. Alnot, Kammerer, J.B., M. Sajieddine, Schuhl, A., Hehn, M.   +17 more
core   +1 more source