Results 91 to 100 of about 60,266 (237)

Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors

open access: yes, 2010
Linear magnetoresistance occurs in semiconductors as a consequence of strong electrical disorder and is characterized by nonsaturating magnetoresistance that is proportional to the applied magnetic field. By investigating a disordered MnAs-GaAs composite
Barua, R.   +4 more
core   +1 more source

Solution‐Processed Spin‐Polarized Light‐Emitting Diodes of Colloidal Quantum Wells and Magnetic Nanoparticles

open access: yesAdvanced Optical Materials, EarlyView.
All‐solution‐processed spin‐LEDs based on colloidal Fe3O4 nanoparticles and CdSe/CdZnS core/shell CQWs that allows for polarization modulation of electroluminescence are fabricated. With these devices, electrical injection of spin‐polarized carriers from the Fe3O4 nanoparticle layer into the CdSe/CdZnS CQWs is demonstrated, realizing circularly ...
Savas Delikanli   +14 more
wiley   +1 more source

Wearable and Implantable Devices for Continuous Monitoring of Muscle Physiological Activity: A Review

open access: yesAdvanced Science, EarlyView.
Recent advances in materials and device engineering enable continuous, real‐time monitoring of muscle activity via wearable and implantable systems. This review critically summarizes emerging technologies for tracking electrophysiological, biomechanical, and oxygenation signals, outlines fundamental principles, and highlights key challenges and ...
Zhengwei Liao   +4 more
wiley   +1 more source

Magnetoresistance

open access: yes
Citation: 'magnetoresistance' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08839 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms. Requests
openaire   +2 more sources

Anomalous magnetoresistance in centrosymmetric skyrmion-lattice magnet Gd2PdSi3

open access: yesNew Journal of Physics, 2020
We performed a systematic study of the temperature- and field-dependence of magnetization and resistivity of Gd _2 PdSi _3 , which is a centrosymmetric skyrmion crystal.
Han Zhang   +7 more
doaj   +1 more source

Harnessing Time‐Dependent Magnetic Texture Dynamics via Spin‐Orbit Torque for Physics‐Enhanced Neuromorphic Computing

open access: yesAdvanced Science, EarlyView.
A neuromorphic computing platform using spin‐orbit torque‐controlled magnetic textures is reported. The device implements bio‐inspired synaptic functions and achieves high performance in both pattern recognition (>93%) and combinatorial optimization (>95%), enabling unified processing of cognitive and optimization tasks.
Yifan Zhang   +13 more
wiley   +1 more source

Universal negative magnetoresistance in antiferromagnetic metals from symmetry breaking of electron wave functions

open access: yesCommunications Materials
Layered van der Waals crystals of topologically non-trivial and trivial semimetals with antiferromagnetic (AFM) ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a ...
Pavel D. Grigoriev   +7 more
doaj   +1 more source

Magnetoresistive Properties of the Array of Iron Oxide Nanoparticles in Conducting Matrix [PDF]

open access: yesЖурнал нано- та електронної фізики, 2015
The results of the study of giant magnetoresistance in film systems Ag / array of ferrite nanoparticles / Ag and graphene / array of ferrite nanoparticles / graphene, which were formed by means of spin-coating or Langmuir-Blodgett technique, are ...
D.M. Kostyuk   +4 more
doaj  

Ferromagnetic Interlayer Exchange Coupling in Magnetic Topological Insulator Sandwich Heterostructures

open access: yesAdvanced Science, EarlyView.
A thin topological insulator (Bi2Te3) inserted between two single magnetic septuple layers of MnBi2Te4 is shown to convert the intrinsic antiferromagnetic interlayer coupling into robust ferromagnetism. As the Bi2Te3 spacer thickness increases from 1 to 4 quintuple layers, the weakening coercivity, Curie temperature, and interlayer coupling reveal ...
Enayet Hossain   +10 more
wiley   +1 more source

Antilocalization effect on photo-generated carriers in semi-insulating GaAs sample

open access: yesMaterials Research, 2012
Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in ...
Emilson Ribeiro Viana   +5 more
doaj  

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