Results 201 to 210 of about 36,882 (315)

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang, Jaerok Kim, Sang‐Min Lee, Sungpyo Baek, Saeroonter Oh, Yoonmyung Lee, Sungjoo Lee   +6 more
wiley   +1 more source

An Ultra‐Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing

Advanced Functional Materials, Volume 36, Issue 10, 2 February 2026.
An ultra‐robust memristor based on SrTiO3‐CeO2 (S‐C) vertically aligned nanocomposite (VAN) achieving exceptional endurance of 1012 switching cycles via interface engineering. Artificial neural networks (ANNs) integrated with S‐C VAN memristors exhibit high training accuracy across multiple datasets.
Zedong Hu, Hongyi Dou, Jeremy B. Gan, Cun Li, Xuanyu Sheng, Juanjuan Lu, Abhijeet Choudhury, Jialong Huang, Yizhi Zhang, Zhongxia Shang, Ye Cao, Xinghang Zhang, Haiyan Wang   +12 more
wiley   +1 more source

Nanoscale Insights into the Dynamics of Conductive Filament Growth/Dissolution in 2D Material-Based Memristors. [PDF]

Adv Sci (Weinh)
Li C, Pan R, Xu T, Shen J, Zhu Y, Zhou M, Hu X, Yin K, Sun L.   +8 more
europepmc   +1 more source

Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet. [PDF]

Nat Commun
Guan Y, Wu Y, Zhang Y, Jeon JC, Zhang W, Xiao K, Parkin SSP.   +6 more
europepmc   +1 more source

Combinatorial Screening for Europium Induced Defect Engineering in Titania Anodic Memristors

Advanced Materials Interfaces, Volume 13, Issue 3, 3 February 2026.
A Ti‐Eu thin‐film combinatorial libary (3‐17 at.% Eu) was fabricated by co‐sputtering and anodisation. Systematic screening revealed forming‐free memristors with analog switching, with compositions between 7‐17 at.% Eu showing improved endurance and multilevel resistive states.
Elena Atanasova, Andreas Greul, Ioan Mihail Ghitiu, Nicu Scarisoreanu, Achim Walter Hassel, Andrei Ionut Mardare   +5 more
wiley   +1 more source

2D Tellurene-Based Optoelectronic Memristor with Temporal Dynamics for Multimodal Reservoir Computing System. [PDF]

Adv Sci (Weinh)
Bian J, Li Z, Liang S, Tao Y, Wang Z, Zhu Y, Wang C, Xu H, Liu Y.   +8 more
europepmc   +1 more source

An Ultrathin, Cyano‐Functionalized Copolymeric Memristor by iCVD Process for Driving Convolutional Neural Networks of High‐Resolution Images

Advanced Science, Volume 13, Issue 8, 9 February 2026.
Two‐terminal polymer memristors based on cyano‐functionalized copolymer films are developed via a solvent‐free, initiated chemical vapor deposition (iCVD) process for high‐resolution image classification. Molecularly engineered p(CEA‐co‐DEGDVE) films enable stable, linear, and symmetric conductance modulation, supporting multi‐level weight mapping in ...
Ji In Kim, Minsu So, Woo Jin Wang, Taehoon Kim, Eun Su Jeong, Kyumin Sim, Hamin Park, Sung Kyu Kim, Yong Goo Shin, Junhwan Choi, Min Ju Kim   +10 more
wiley   +1 more source

Ultra-simplified fabrication of all-silver memristor arrays. [PDF]

Nanoscale Adv
Sun F, Guo L, Meng Y, Cheng G.
europepmc   +1 more source

Tunneling‐Controlled Fusion of Short‐ and Long‐Term Memory in SiO2/HfO2‐Based Neuromorphic Device for Time‐Series Prediction

Advanced Science, Volume 13, Issue 7, 3 February 2026.
Based on trap‐assisted tunneling, the devices can fuse STM/LTM, where the low switching energy of 1 pJ and stable low‐power retention (0.2 % loss ratio and 3.05 × 10−11 W) is achieved. Training in a long short‐term memory network it allows to analysis time‐series data and then makes precise long‐term predictions with an error ratio of 4.465 ...
Chengdong Yang, Lihua Xu, Linlin Su, Yue Wu   +3 more
wiley   +1 more source