Results 101 to 110 of about 13,015 (262)

Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors

Advanced Science, EarlyView.
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su, Minghao Wang, Xiaolin Tai, Yuhua Liu, Yue Lin, Yuqiao Guo, Jing Peng, Yi Xie, Changzheng Wu   +8 more
wiley   +1 more source

Molecular Crystal Memristor

Nature Nanotechnology
Abstract The emergence of memristors offers a revolutionary solution for achieving in-memory computing at the hardware level. However, existing memristors suffer from the inherent channel materials damage during cyclical resistive switching, rendering excessive energy consumption and poor endurance.
Lanhao Qin, Pengfei Guan, Jiefan Shao, Yu Xiao, Yimeng Yu, Jie Su, Conghui Zhang, Yanyong Li, Shenghong Liu, Pengyu Li, Decai Ouyang, Wenke He, Fenghao Liu, Kaichen Zhu, Kailang Liu, Zhenpeng Yao, Jinsong Wu, Yinghe Zhao, Huiqiao Li, Fei Hui, Peng Lin, Mario Lanza, Yuan Li, Tianyou Zhai   +23 more
openaire   +1 more source

Single‐Crystal PZT‐Driven Organic Piezo‐Phototronic Adaptive Transistors Toward Advanced Spatiotemporal Visual Computing

Advanced Science, EarlyView.
Here, we propose a single‐crystal PZT‐based piezo‐phototronic organic adaptive memory transistor (OAMT), achieving a record memory window capacity factor (γ) of 0.87 at a low SS of 200 mV/decade via efficient multi‐field control. The device achieves a high recognition accuracy ∼ 90% in neuromorphic simulations, demonstrates robust fault tolerance under
Chenhao Xu, Xingyu Cao, Zewen Li, Shifu Xiong, Yongxu Hu, Zhongwu Wang, Yujie Yuan, Lei Zheng, Wenping Hu   +8 more
wiley   +1 more source

Filamentary-based organic memristors for wearable neuromorphic computing systems

Neuromorphic Computing and Engineering
A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under
Chang-Jae Beak, Jihwan Lee, Junseok Kim, Jiwoo Park, Sin-Hyung Lee   +4 more
doaj   +1 more source

Infrared Machine Vision System Based on Te NWs‐Au NPs Plasmonic Optoelectronic Memristor for Motion Detection

Advanced Science, EarlyView.
A plasmonic optoelectronic memristor based on Te nanowires‐Au nanoparticles/ι‐carrageenan enables IR‐programmed and visiblelight‐erased non‐volatile conductance. The all‐photonic write/erase scheme supports in‐sensor logic and real‐time motion detection in darkness.
Jingyao Bian, Yongxing Zhu, Ye Tao, Zhongqiang Wang, Xiaoning Zhao, Ya Lin, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

Ultra-fast switching memristors based on two-dimensional materials

Nature Communications
The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of
S. S. Teja Nibhanupudi, Anupam Roy, Dmitry Veksler, Matthew Coupin, Kevin C. Matthews, Matthew Disiena, Ansh, Jatin V. Singh, Ioana R. Gearba-Dolocan, Jamie Warner, Jaydeep P. Kulkarni, Gennadi Bersuker, Sanjay K. Banerjee   +12 more
doaj   +1 more source

Memristive Baffle Systems: Design, Simulation, and Applications

Advanced Science, EarlyView.
This study presents a nanoscale baffle‐system strategy for HfO2‐based memristors that controls oxygen‐vacancy transport through Al2O3 interlayers. Guided by multiscale simulation and experimental validation, the Al2O3 dual‐barrier configuration simultaneously enhances synaptic linearity and endurance.
Eun Young Kim, Juseong Park, Sumin Ju, Taeyoung Jeong, Dohyun Kim, Woojoon Park, Myeongchan Ko, Woon Hyung Cheong, Jung‐Hae Choi, Kyung Min Kim   +9 more
wiley   +1 more source

Multi‐Physical Field Modulated P‐Bit Device Based on VO2 Thin Film

Advanced Science, EarlyView.
We have proposed a VO2‐based P‐bit device where synergistic multi‐physical field modulation enables real‐time tunability of randomness. Besides introducing a new phase‐change material‐based device approach for high‐performance P‐bits, this study also demonstrates a synergistic multi‐physical field modulation strategy that opens new opportunities for ...
Bowen Sun, Jianjun Li, Ting Zhou, Jinglin Zhu, Meiling Liu, Zhihan Lin, Chang Wang, Chengyu Li, Yingxue Chen, Xiaokun Huo, Chongwen Zou   +10 more
wiley   +1 more source

Perovskite‐Nanowire‐Array‐Based Continuous‐State Programmable Artificial Synapse for Neuromorphic Computing

Advanced Intelligent Systems
Perovskite‐based memristors with tunable nonvolatile states are developed to mimic the synaptic interconnects of biological nervous systems and map neuromorphic computing networks to integrated circuits.
Yuting Zhang, Zichao Ma, Zhesi Chen, Swapnadeep Poddar, Yudong Zhu, Bing Han, Chak Lam Jonathan Chan, Yucheng Ding, Xiangpeng Kong, Zhiyong Fan   +9 more
doaj   +1 more source

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

Advanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan, Meiqi An, Weili Liu, Haotian Wang, Shuai Yang, Jing Li, Jianliang Li, Yingmin Luo, Chao Wang, Jiao Xu, Yaodan Chi, Yiming Yang   +11 more
wiley   +1 more source