Results 121 to 130 of about 25,251 (300)

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source

Perovskite‐Nanowire‐Array‐Based Continuous‐State Programmable Artificial Synapse for Neuromorphic Computing

Advanced Intelligent Systems
Perovskite‐based memristors with tunable nonvolatile states are developed to mimic the synaptic interconnects of biological nervous systems and map neuromorphic computing networks to integrated circuits.
Yuting Zhang, Zichao Ma, Zhesi Chen, Swapnadeep Poddar, Yudong Zhu, Bing Han, Chak Lam Jonathan Chan, Yucheng Ding, Xiangpeng Kong, Zhiyong Fan   +9 more
doaj   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source

Electrochemical anodic oxidation assisted fabrication of memristors

International Journal of Extreme Manufacturing
Owing to the advantages of simple structure, low power consumption and high-density integration, memristors or memristive devices are attracting increasing attention in the fields such as next generation non-volatile memories, neuromorphic computation ...
Shuai-Bin Hua, Tian Jin, Xin Guo
doaj   +1 more source

Cooperative Prediction Model of Echo State Network Based on Memristor

, 2023
Jingyu Sun, Lixiang Li, Haipeng Peng
openalex   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source

Tunable stochastic memristors for energy-efficient encryption and computing

Nature Communications
Information security and computing, two critical technological challenges for post-digital computation, pose opposing requirements – security (encryption) requires a source of unpredictability, while computing generally requires predictability.
Kyung Seok Woo, Janguk Han, Su-in Yi, Luke Thomas, Hyungjun Park, Suhas Kumar, Cheol Seong Hwang   +6 more
doaj   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source