Results 131 to 140 of about 3,739 (202)

Hydrogen-terminated diamond field-effect transistor with AlO_x dielectric layer formed by autoxidation. [PDF]

Sci Rep, 2019
Wang YF, Wang W, Chang X, Zhang X, Fu J, Liu Z, Zhao D, Shao G, Fan S, Bu R, Zhang J, Wang HX.   +11 more
europepmc   +1 more source

Epitaxial Growth of Ga₂O₃: A Review. [PDF]

Materials (Basel)
Rahaman I, Ellis HD, Chang C, Mudiyanselage DH, Xu M, Da B, Fu H, Zhao Y, Fu K.   +8 more
europepmc   +1 more source

A Highly Integrated C-Band Feedback Resistor Transceiver Front-End Based on Inductive Resonance and Bandwidth Expansion Techniques. [PDF]

Micromachines (Basel)
Shan B, Fu H, Wang J.
europepmc   +1 more source

High-Temperature and High-Electron Mobility Metal-Oxide-Semiconductor Field-Effect Transistors Based on N-Type Diamond. [PDF]

Adv Sci (Weinh)
Liao M, Sun H, Koizumi S.
europepmc   +1 more source

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas. [PDF]

Sci Rep, 2016
Zhang K, Sumiya M, Liao M, Koide Y, Sang L.   +4 more
europepmc   +1 more source

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts. [PDF]

Micromachines (Basel), 2018
Wojtasiak W, Góralczyk M, Gryglewski D, Zając M, Kucharski R, Prystawko P, Piotrowska A, Ekielski M, Kamińska E, Taube A, Wzorek M.   +10 more
europepmc   +1 more source

Recent progress of Ga₂O₃ materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method. [PDF]

Fundam Res
Zhang Z, Yan P, Song Q, Chen H, Zhang W, Yuan H, Du F, Liu D, Chen D, Zhang Y.   +9 more
europepmc   +1 more source

Challenges, Power-Device Progress, and Emerging Harsh-Environment Applications for Ultrawide-Bandgap Diamond Semiconductors. [PDF]

Materials (Basel)
Alshammari N, Rao MV, Li Q.
europepmc   +1 more source

Diamond MESFET transistor

III-Vs Review, 2005
openaire   +1 more source

A Novel Symmetric GaN MESFET by Dual Extra Layers of Si3N4

Physica E: Low-Dimensional Systems and Nanostructures, 2015
In this paper, a novel GaN MESFET structure with Double Extra Layers of Si3N4 (DEL-MESFET) under gate edges has been introduced in order to modify the carrier concentration and the electric field in the channel.
Amirhossein Aminbeidokhti, Ali Asghar Orouji, Zeinab Ramezani   +2 more
exaly   +2 more sources