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MRS Proceedings, 1987
ABSTRACTA β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxialnonpSiC layer grown by chemical vapor deposition on ap-type Si(100) substrate. Modulation of then-type channel current is achieved with a Au Schottky barrier gate.
G. Kelner, S. Binari, K. Sleger, H. Kong
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ABSTRACTA β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxialnonpSiC layer grown by chemical vapor deposition on ap-type Si(100) substrate. Modulation of then-type channel current is achieved with a Au Schottky barrier gate.
G. Kelner, S. Binari, K. Sleger, H. Kong
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1975 International Electron Devices Meeting, 1975
The operating frequency of RCA's power GaAs MESFET amplifiers has been extended to 18 GHz. We have achieved 225 mW CW output power with 4.5 dB gain at 18 GHz from a 1200 µm source periphery device. At 15 GHz the same device yielded 451 mW output power with 5.2 dB gain with a power added efficiency of 12.5%.
H.C. Huang +5 more
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The operating frequency of RCA's power GaAs MESFET amplifiers has been extended to 18 GHz. We have achieved 225 mW CW output power with 4.5 dB gain at 18 GHz from a 1200 µm source periphery device. At 15 GHz the same device yielded 451 mW output power with 5.2 dB gain with a power added efficiency of 12.5%.
H.C. Huang +5 more
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1991 IEEE MTT-S International Microwave Symposium Digest, 2002
A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz.
S.L.G. Chu +6 more
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A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz.
S.L.G. Chu +6 more
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IEEE Electron Device Letters, 1980
This letter discusses some options in scaling Si-MESFETs and compares them to the scaling of MOSFETs with the aid of a scaling table based on first order device equations.
G.V. Ram, M.I. Elmasry
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This letter discusses some options in scaling Si-MESFETs and compares them to the scaling of MOSFETs with the aid of a scaling table based on first order device equations.
G.V. Ram, M.I. Elmasry
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IEEE Transactions on Microwave Theory and Techniques, 1976
GaAs metal-semiconductor FET's (MESFET) are developed for use in amplifiers at microwave frequencies. The FET has a Schottky barrier between the gate and source, operating in the same manner as a Schottky-barrier diode. If the Schottky barrier is used as a mixer, the IF signal is generated and simultaneously amplified by the FET itself.
O. Kurita, K. Morita
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GaAs metal-semiconductor FET's (MESFET) are developed for use in amplifiers at microwave frequencies. The FET has a Schottky barrier between the gate and source, operating in the same manner as a Schottky-barrier diode. If the Schottky barrier is used as a mixer, the IF signal is generated and simultaneously amplified by the FET itself.
O. Kurita, K. Morita
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1990
The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
B. RICCO' +3 more
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The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
B. RICCO' +3 more
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‘Atomistic’ simulation of ultra-submicron MESFETs
Microelectronics Journal, 2003The effects of a discrete random dopant distribution on the MESFET characteristics were investigated using device simulation. The first three moments of the Boltzmann equation coupled to the Poisson equation are solved self-consistently. The model accounts for hot-electron effects, degeneracy and surface-states effects.
K. F. Vaz +3 more
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Large-signal modeling of SOI MESFETs
Solid-State Electronics, 2006Abstract It has been demonstrated that sub-micron metal–semiconductor field-effect transistors (MESFETs) can be fabricated using a commercial 3.5 V silicon-on-insulator (SOI) CMOS foundry with no changes to the CMOS process flow. The SOI MESFETs demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the ...
A. Balijepalli +5 more
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Study of neutron damage in GaAs MESFETs
IEEE Transactions on Nuclear Science, 1997Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, g/sub m/(f), and output ...
MENEGHESSO, GAUDENZIO +5 more
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1990
An idealized MESFET (metal-semiconductor field effect transistor) structure is shown in Fig. 2.1.1. An active layer of n-type GaAs is grown on top of a semi-insulating GaAs substrate. The drain and source electrodes make contact with the active layer through an n+ region under each. A third electrode, which is the gate, is placed directly on the active
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An idealized MESFET (metal-semiconductor field effect transistor) structure is shown in Fig. 2.1.1. An active layer of n-type GaAs is grown on top of a semi-insulating GaAs substrate. The drain and source electrodes make contact with the active layer through an n+ region under each. A third electrode, which is the gate, is placed directly on the active
openaire +1 more source