Results 141 to 150 of about 3,739 (202)

Backdating in GaAs MESFET's

IEEE Transactions on Microwave Theory and Techniques, 1982
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr2+and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented.
C. Kocot, C.A. Stolte
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Effect of carrier injection into MESFET substrates : comparison of MESFET on a semi-insulating buffer, MESFET on a P substrate, and substrate-less MESFET

Annales des Télécommunications, 1988
The carrier injection from the active-layer of the submicron-gate-lengthMesfet into the buffer-layer, or substrate in general, is studied by means of a two-dimensional computer simulation in which the energy conservation equation is simultaneously solved with the carrier conservation equation and Poisson’s equation.
Samir El-Ghazaly, Tatsuo Itoh
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Design Of MESFET Optical Amplifier

SPIE Proceedings, 1988
GaAs MESFETs, originally designed for microwave applications, have become an important com ponent of receivers in high-speed optical telecommunication systems. For these applications, the crucial point in the device modeling is the evaluation of the induced gate noise and its correlation to the channel noise.
ARMENISE M. N., PERRI, Anna Gina
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Nonlinearities in a MESFET distributed model

International Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering, 1996
A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones.
T. M. Martín-Guerrero, C. Camacho-Peñalosa   +1 more
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Noise in distributed MESFET preamplifiers

IEEE Journal of Solid-State Circuits, 1996
The theory of noise in a distributed MESFET preamplifier is developed. From this, it is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance and appropriate scaling of the MESFET width.
Alois P. Freundorfer, Thé Linh Nguyen
openaire   +1 more source

A capacitance model for GaAs MESFETs

IEEE Journal of Solid-State Circuits, 1991
A capacitance model for a GaAs MESFET suitable for implementation in the circuit analysis program SPICE is presented. The model consists of nonlinear capacitances that are a function of two voltages. Such a model gives rise to ordinary nonlinear capacitances and transcapacitances. The placement of these elements in the Y matrix is shown.
Norman Scheinberg, Ellis Chisholm
openaire   +2 more sources

Surface channel MESFETs on hydrogenated diamond

Nanotechnology, 2011
Metal–semiconductor field effect transistors (MESFETs) based on hydrogen terminated diamond were fabricated according to different layouts. Aluminum gates were used on single crystal and low-roughness polycrystalline diamond substrates while gold was used for ohmic contacts.
G Conte, E Giovine, A Bolshakov, V Ralchenko, V Konov   +4 more
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On the advantages of GaAs dual-gate MESFET's in comparison to Single-gate MESFET's

2006 2nd International Conference on Information & Communication Technologies, 2006
This paper presents a bidimectiomnal DC study of a dual-gate MESFET (DGMESFET) and a single-gate MESFET (SGMESFET) GaAs with 0.5 mum gates length. We describe the physical operating of these devices and especially the physical phenomena (velocity-field) in dual and single-gate GaAs MESFET.
H. Djelti, M. Feham, M. Kameche, A. Ouslimani   +3 more
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Simulation of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

GaAs IC Symposium Technical Digest 1992, 2003
Drain-current transient of GaAs MESFETs are simulated in the range of 10/sup -13/ to 10/sup 2/ s. The currents become constant temporarily at round t equivalent to 10/sup -11/ s, but begin to decrease or increase after some periods, reaching real steady-state values.
K. Horio, Y. Fuseya
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Models for the JFET and the MESFET

1990
Although from a viewpoint of manufacturing and application the differences between the junction-gate field-effect transistor (JFET) and the metal-gate field-effect transistor (MESFET) are considerable, their physical operation is almost identical. The modelling of these devices is therefore discussed in one chapter.
Henk C. de Graaff, François M. Klaassen
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