Results 151 to 160 of about 6,463 (213)
Study on ultra-high sensitivity piezoelectric effect of GaN micro/nano columns. [PDF]
Nano Converg, 2019 Fu J, Zong H, Hu X, Zhang H.
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Recent progress of Ga2O3 materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method. [PDF]
Fundam ResZhang Z +9 more
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Extraordinary electroconductance in metal-semiconductor hybrid structures. [PDF]
Appl Phys Lett, 2008 Wang Y +7 more
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IEEE Transactions on Microwave Theory and Techniques, 1982
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr2+and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented.
C. Kocot, C.A. Stolte
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The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr2+and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented.
C. Kocot, C.A. Stolte
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MRS Proceedings, 1987
ABSTRACTA β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxialnonpSiC layer grown by chemical vapor deposition on ap-type Si(100) substrate. Modulation of then-type channel current is achieved with a Au Schottky barrier gate.
G. Kelner, S. Binari, K. Sleger, H. Kong
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ABSTRACTA β-SiC MESFET structure with functional DC characteristics has been fabricated and evaluated. The MESFET employs an epitaxialnonpSiC layer grown by chemical vapor deposition on ap-type Si(100) substrate. Modulation of then-type channel current is achieved with a Au Schottky barrier gate.
G. Kelner, S. Binari, K. Sleger, H. Kong
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1975 International Electron Devices Meeting, 1975
The operating frequency of RCA's power GaAs MESFET amplifiers has been extended to 18 GHz. We have achieved 225 mW CW output power with 4.5 dB gain at 18 GHz from a 1200 µm source periphery device. At 15 GHz the same device yielded 451 mW output power with 5.2 dB gain with a power added efficiency of 12.5%.
H.C. Huang +5 more
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The operating frequency of RCA's power GaAs MESFET amplifiers has been extended to 18 GHz. We have achieved 225 mW CW output power with 4.5 dB gain at 18 GHz from a 1200 µm source periphery device. At 15 GHz the same device yielded 451 mW output power with 5.2 dB gain with a power added efficiency of 12.5%.
H.C. Huang +5 more
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IEEE Transactions on Microwave Theory and Techniques, 1976
GaAs metal-semiconductor FET's (MESFET) are developed for use in amplifiers at microwave frequencies. The FET has a Schottky barrier between the gate and source, operating in the same manner as a Schottky-barrier diode. If the Schottky barrier is used as a mixer, the IF signal is generated and simultaneously amplified by the FET itself.
O. Kurita, K. Morita
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GaAs metal-semiconductor FET's (MESFET) are developed for use in amplifiers at microwave frequencies. The FET has a Schottky barrier between the gate and source, operating in the same manner as a Schottky-barrier diode. If the Schottky barrier is used as a mixer, the IF signal is generated and simultaneously amplified by the FET itself.
O. Kurita, K. Morita
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Design Of MESFET Optical Amplifier
SPIE Proceedings, 1988GaAs MESFETs, originally designed for microwave applications, have become an important com ponent of receivers in high-speed optical telecommunication systems. For these applications, the crucial point in the device modeling is the evaluation of the induced gate noise and its correlation to the channel noise.
ARMENISE M. N., PERRI, Anna Gina
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Annales des Télécommunications, 1988
The carrier injection from the active-layer of the submicron-gate-lengthMesfet into the buffer-layer, or substrate in general, is studied by means of a two-dimensional computer simulation in which the energy conservation equation is simultaneously solved with the carrier conservation equation and Poisson’s equation.
Samir El-Ghazaly, Tatsuo Itoh
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The carrier injection from the active-layer of the submicron-gate-lengthMesfet into the buffer-layer, or substrate in general, is studied by means of a two-dimensional computer simulation in which the energy conservation equation is simultaneously solved with the carrier conservation equation and Poisson’s equation.
Samir El-Ghazaly, Tatsuo Itoh
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Surface channel MESFETs on hydrogenated diamond
Nanotechnology, 2011Metal–semiconductor field effect transistors (MESFETs) based on hydrogen terminated diamond were fabricated according to different layouts. Aluminum gates were used on single crystal and low-roughness polycrystalline diamond substrates while gold was used for ohmic contacts.
G Conte +4 more
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