Results 171 to 180 of about 6,463 (213)
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Gallium arsenide photo-MESFET's
IEEE Transactions on Electron Devices, 1990Photodetection response measurements performed on normally off GaAs photo-MESFETs are discussed. Two modes were investigated: (i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on-threshold, and (ii) the subthreshold mode with subband-gap photon energy ...
LAKSHMI, B +5 more
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Sensors and Actuators B: Chemical, 1996
Abstract Gas-sensitive GaAs-MESFETs with catalytic gates have been fabricated. Gas response of I–V output and transfer characteristics are discussed. Pd- and Pt-catalysed MESFETs show NO2 and NH3-sensitivity. There is no cross sensitivity to H2O, CO1, CO2 and CH4 below 100°C operating temperatures. Possible sensor mechanisms are proposed.
Martin Jaegle, Klaus Steiner
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Abstract Gas-sensitive GaAs-MESFETs with catalytic gates have been fabricated. Gas response of I–V output and transfer characteristics are discussed. Pd- and Pt-catalysed MESFETs show NO2 and NH3-sensitivity. There is no cross sensitivity to H2O, CO1, CO2 and CH4 below 100°C operating temperatures. Possible sensor mechanisms are proposed.
Martin Jaegle, Klaus Steiner
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1990
The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
B. RICCO' +3 more
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The paper presents new data on the reliability of GaAs MESFETs for microwave telecommunications obtained from the analysis of field repairs and accelerated tests. This work represents a systematic investigation of devices in the context of real applications, thus providing a significative contribution to the state of the art in the field.
B. RICCO' +3 more
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Nonlinearities in a MESFET distributed model
International Journal of Microwave and Millimeter‐Wave Computer‐Aided Engineering, 1996A numerical optimization study of the nonlinear characteristics of a MESFET-distributed model is presented. It is shown that nonlinearities are present not only in the distributed conductance and capacitance element, but also in the resistance and inductance ones.
T. M. Martín-Guerrero +1 more
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Large-signal modeling of SOI MESFETs
Solid-State Electronics, 2006Abstract It has been demonstrated that sub-micron metal–semiconductor field-effect transistors (MESFETs) can be fabricated using a commercial 3.5 V silicon-on-insulator (SOI) CMOS foundry with no changes to the CMOS process flow. The SOI MESFETs demonstrate excellent RF capabilities and can operate at voltages that are at least 3X higher than the ...
A. Balijepalli +5 more
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SPIE Proceedings, 1992
ABSTRACT. A 1 pm gate GaAs MESFET desi gned for the I ower X -bandfrequencies has been fabricated and characterized. A MOCVD—grown, Se-doped channel layer with 3Q00 cm ZVs carrier mobility and a recessed gate structure resulted in a maximum devicetransconductancecharacterized by the measured gain of 8 dB and noise figure of of 180 mS/mm.
Miroslaw Szreter +3 more
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ABSTRACT. A 1 pm gate GaAs MESFET desi gned for the I ower X -bandfrequencies has been fabricated and characterized. A MOCVD—grown, Se-doped channel layer with 3Q00 cm ZVs carrier mobility and a recessed gate structure resulted in a maximum devicetransconductancecharacterized by the measured gain of 8 dB and noise figure of of 180 mS/mm.
Miroslaw Szreter +3 more
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Silicon carbide microwave MESFET's
IEEE Transactions on Electron Devices, 1992Summary form only given. The authors describe record-setting 5-GHz SiC MESFET performance and the effects of device design on achieving these results. Bulk growth of 6H-SiC was performed using a physical vapor transport process, and the resultant undoped single-crystal boules were sliced and polished to generate 1-in-diameter wafers.
R.C. Clarke +5 more
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IEEE Electron Device Letters, 1988
GaAs metal semiconductor field-effect transistors (MESFETs) have been successfully fabricated on molecular-beam epitaxial (MBE) films grown on the off ...
Y.C. Pao, W. Ou, J.S. Harris
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GaAs metal semiconductor field-effect transistors (MESFETs) have been successfully fabricated on molecular-beam epitaxial (MBE) films grown on the off ...
Y.C. Pao, W. Ou, J.S. Harris
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1991 IEEE MTT-S International Microwave Symposium Digest, 2002
A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz.
S.L.G. Chu +6 more
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A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz.
S.L.G. Chu +6 more
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2009
Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the
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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the
openaire +2 more sources