Results 251 to 260 of about 50,856 (266)

Resolution limits of metal assisted chemical etching of polysilicon

2021
Patterning and etching high aspect ratio, sub-50 nanometer structures for 3D device architectures is becoming a critical challenge in advanced semiconductor device fabrication. Metal assisted chemical etching (MACE) is a wet etch process that has demonstrated very high aspect ratio structures in single crystal silicon at sub-50 nanometer scale.
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Metal-Assisted Chemical Etching of Silicon for Photovoltaic Application

2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO), 2019
Silicon nanowires were obtained by means of metal-assisted chemical etching of silicon wafer. In this work, the effect of Ag-NP deposition time and etching time of silicon on the surface morphology, reflection spectra and photovoltaic characteristics of solar cells was studied.
Viktoriia Koval, Yuriy Yakymenko, Anatoliy Ivashchuk, Mykhailo Dusheyko, Oleksandr Masalskyi, Mykola Koliada, Dmytro Kulish   +6 more
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Metal-assisted chemical etching for designable monocrystalline silicon nanostructure

Materials Research Bulletin, 2016
Abstract Metal-assisted chemical etching (MACE) is a simple, low-cost and versatile method of fabricating various silicon nanostructures. Due to the etching anisotropy of monocrystalline silicon, i.e. its different crystal orientation has different number of silicon back bonds needed to be broken in the etching process, the obtained silicon ...
Meicheng Li, Yingfeng Li, Wenjian Liu, Luo Yue, Ruike Li, Younan Luo, Mwenya Trevor, Bing Jiang, Fan Bai, Pengfei Fu, Yan Zhao, Chao Shen, Joseph Michel Mbengue   +12 more
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Metasurface Optic Features Using Metal-Assisted Chemical Etching (MACE)

ECS Meeting Abstracts
Metal-assisted chemical etching (MACE or MacEtch) is a versatile method for fabricating nano and micro-structured silicon (Si), which has garnered significant attention due to its potential applications in photovoltaics, sensors, and nanoelectronics. The process involves the oxidation of Si in the presence of a metal catalyst (typically noble metals
Christopher St. John, Christian Arrington, David Burckel   +2 more
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Metal-assisted chemical etching of silicon: a review.

Advanced materials (Deerfield Beach, Fla.), 2011
This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced.
Zhipeng, Huang, Nadine, Geyer, Peter, Werner, Johannes, de Boor, Ulrich, Gösele   +4 more
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Metal assisted chemical etching for light emitting silicon nanowires

AIP Conference Proceedings, 2013
The paper reports on the fabrication of vertically aligned silicon nanowire arrays using metal assisted chemical etching process of p-type silicon wafer. Microstructure has been investigated with scanning electron microscope and high resolution transmission electron microscope. Cathodoluminescence spectroscopy and imaging. have been used to investigate
S. Jana, S. R. Bhattacharyya
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Mechanistic Characteristics of Metal-Assisted Chemical Etching in GaAs

The Journal of Physical Chemistry C, 2014
Because of the unique physical properties, various GaAs micro- and nanostructures have attracted increasing research attention for many technical applications such as solar cells, light-emitting diodes, and field-effect transistors. In this regard, numerous fabrication techniques have been explored, and among all, metal-assisted chemical etching is ...
Ho-Yuen Cheung, Hao Lin, Fei Xiu, Fengyun Wang, SenPo Yip, Johnny C. Ho, Chun-Yuen Wong   +6 more
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Silicon nanowire photodetectors made by metal-assisted chemical etching

SPIE Proceedings, 2016
Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface.
Ying Xu, Chuan Ni, Andrew Sarangan
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Reducing manufacturing constraints of metal-assisted chemical etching

Integrated circuits, advanced sensors, and photovoltaics are just a subset of the technologies enabled by high throughput silicon nanomanufacturing. The manufacturing of these devices is not trivial. The dozens, if not hundreds, of processes that produce silicon-based devices impose limitations on subsequent steps. Inconsistencies and defects resulting
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Metal-Assisted Chemical Etching of GaAs Using Au Nanodots

ECS Meeting Abstracts, 2017
III-V compound semiconductors have attracted attention as next-generation materials and potential alternatives to silicon-based semiconductors because of their excellent properties including superior carrier mobility and direct band gap. In a previous study, we fabricated microbump arrays of InP [1] and line patterns and pillar arrays of GaAs using ...
Ryota Imai, Hideki Hashimoto, Hidetaka Asoh   +2 more
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