Results 151 to 160 of about 213,422 (311)

An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor. [PDF]

Micromachines (Basel), 2023
Zhang Y, Lu H, Liu C, Zhang Y, Yao R, Liu X.   +5 more
europepmc   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source

Dichalcogenide and Metal Oxide Semiconductor-Based Composite to Support Plasmonic Catalysis. [PDF]

ACS Omega, 2023
Alanazi AT, Alotaibi A, Alqahtani M, Rice JH.   +3 more
europepmc   +1 more source

Selective Separation of the Rare Earth Elements Dysprosium and Neodymium via Tailoring Nanocellulose Chemical Structure

Advanced Functional Materials, EarlyView.
Dicarboxylate‐modified anionic hairy cellulose nanocrystals exhibit a high selectivity for dysprosium(III) over neodymium(III). This selectivity arises from disordered dicarboxylate cellulose “hairs” that enable cooperative ionic coordination, hydrogen bonding, and strain‐induced conformational shrinkage.
Roya Koshani, Shang‐Lin Yeh, Karuna Anna Sajeevan, Mica L. Pitcher, Dawson Alexander, Ratul Chowdhury, Amir Sheikhi   +6 more
wiley   +1 more source

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

Advanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante, Valeria Demontis, Jonas Riisnaes Karl, Lam Hoi Tung, Sebastiano De Stefano, Daniela Marongiu, Adolfo Mazzotti, Aditya Bhardwaj, Francesco Mattana, Elisa Pili, Selene Matta, Federico Paolucci, Michele Saba, Andrea Mura, Giovanni Bongiovanni, Monica F Craciun, Saverio Russo, Antonio Di Bartolomeo   +17 more
wiley   +1 more source

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration. [PDF]

Nanomaterials (Basel), 2023
Park BJ, Kim HS, Hahm SH.
europepmc   +1 more source

Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6

Advanced Functional Materials, EarlyView.
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl, Nicholas Clark, David G. Hopkinson, Matthew Hamer, Matthew Watson, Laxman Nagireddy, James E. Nunn, Alexei Barinov, Yichao Zou, William Thornley, Casey Cheung, Wendong Wang, Sam Sullivan‐Allsop, Xiao Li, Astrid Weston, Eli G. Castanon, Andrey V Kretinin, Cephise Cacho, Neil R. Wilson, Sarah J. Haigh, Roman Gorbachev   +20 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Complementary metal-oxide-semiconductor (CMOS) time of evaporation measurement system for binary chemical monitoring. [PDF]

Sci Rep
Ghafar-Zadeh E, Forouhi S, Osouli Tabrizi H, Panahi A, Tahernezhad Y, Amrollahi Biyouki A.   +5 more
europepmc   +1 more source

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO₂ as Passivation and Dielectric Layers. [PDF]

Micromachines (Basel), 2023
Lin YS, Lu CC.
europepmc   +1 more source