Results 161 to 170 of about 3,721 (215)

Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures

Reports on Progress in Physics, 2008
Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These
openaire   +1 more source

Photo-oxidation of alkanes by metal oxide semiconductors

Tetrahedron Letters, 1983
Abstract The partial conversion of alkanes to the corresponding ketones has been achieved by irradiation of a suspension of semiconductor powder in oxygen-saturated alkanes. The reactivity of thermally and chemicallydoped semiconductor and the effect of chemisorbed water have also been studied.
C. Giannotti, S. Le Greneur, O. Watts
openaire   +1 more source

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2009
Variability due to Fermi level pinning at polycrystalline silicon gate grain boundary is examined as an additional source of intrinsic parameter fluctuation. Threshold voltage (Vt) variation with metal gate to avoid the variation is found to be mitigated with the measurement of n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs ...
Ji-Woon Yang, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi, Raj Jammy   +7 more
openaire   +1 more source

Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002
Metal–semiconductor–metal photodetectors with electrode spacing of 0.5 μm have been fabricated on polysilicon films formed by low-pressure chemical vapor deposition. The detectors give a responsivity of 8 mA/W at 980 nm, and a 3-dB bandwidth of 1.5 GHz.
DeVries, A. M., Tarr, N. G., Cheben, Pavel, Grant, Peter, Janz, Siegfried, Xu, Dan-Xia   +5 more
openaire   +1 more source

Catalytic Oxidation of Semiconductors by Alkali Metals

Physica Scripta, 1987
Photoemission core level spectroscopy using synchrotron radiation was employed to study the effect of alkali metals on semiconductor oxidation. In presence of a cesium monolayer on InP(110), we found an exceptionally large increase of the oxidation by 1013.
P Soukiassian, T M Gentle, M H Bakshi, A S Bommannavar, Z Hurych   +4 more
openaire   +1 more source

Odor sensing by semiconductor metal oxides

Sensors and Actuators B: Chemical, 1993
Abstract Attempts have been made to enhance the gas sensitivity of semiconductor metal oxides to trimethylamine (TMA), which is a typical offensive odor. The resistance level in air, catalytic activity and thickness of the sensor material are found to be important sensitivity-determining factors.
Makoto Egashira, Yasuhiro Shimizu
openaire   +1 more source

Metal oxide semiconductors for dye degradation

Materials Research Bulletin, 2015
Abstract Organic contaminants are a growing threat to the environment that widely demands their degradation by high efficient photocatalysts. Thus, the proposed research work primely focuses on the efficient degradation of methyl orange using designed WO 3 –ZnO photocatalysts under both UV and visible light irradiation.
Sangeeta Adhikari, Debasish Sarkar
openaire   +1 more source

Metal Oxide Semiconductors

2023
Zhigang Zang, Wensi Cai, Yong Zhou
openaire   +1 more source

Characteristics of the metal-Oxide-semiconductor transistors

IEEE Transactions on Electron Devices, 1964
The theory of the MOS transistor in the gradual channel approximation is presented with the assumption of constant surface and bulk charge, and constant surface mobility. From the simple theory, the complete design equations are derived and design curves are calculated.
openaire   +1 more source

Metal-oxide-semiconductor (MOS) devices

2002
Abstract MOS integrated circuits, particularly those of the complementary form (CMOS), are very suitable for use in high-performance electronics such as timers, battery-powered computers, robots, missiles, and space vehicles. The power consumed by the CMOS logic element is extraordinarily low compared with nMOS and bipolar circuits.
Andrew Holmes-Siedle, Len Adams
openaire   +1 more source