Results 151 to 160 of about 3,721 (215)

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

High‐Sensitivity Terahertz Gas Sensing Enabled by Undercut Metal‐Dielectric‐Metal Metamaterial

Advanced Materials Interfaces, EarlyView.
A terahertz (THz) metamaterial gas sensor is demonstrated using a metal–dielectric–metal (MDM) absorber with an undercut dielectric layer, which enlarges the gas‐replaced volume and strengthens refractive‐index perturbation of the resonant mode. A reflection dip at 0.766 THz is observed, and acetone–nitrogen tests yield concentration‐dependent shifts ...
Naoki Inomata, Yuki Sakai, Yoshiaki Kanamori   +2 more
wiley   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source

Stabilizing Electrochemical Interfaces With Multifunctional Cobalt Nitride Layers

Advanced Materials Interfaces, EarlyView.
Cobalt nitrides emerged recently as an interesting class of earth‐abundant oxygen evolution catalysts. Herein, plasma‐enhanced atomic layer deposition is used to synthesize multifunctional cobalt nitride layers that simultaneously protect and catalytically activate photoelectrode surfaces.
Matthias Kuhl, Lukas A. Kohlmaier, Sergej Levashov, Lukas M. Wolz, Sonja Matich, Nina Miller, Johannes Dittloff, Johanna Eichhorn   +7 more
wiley   +1 more source

Ti3C2Tx MXene/Silver Composite Foams For Lightweight, High‐Performance Electromagnetic Interference Shielding and Joule Heating

Advanced Materials Interfaces, EarlyView.
Ultrathin MXene/EMF composite foams achieve a specific shielding efficiency of 749.6 dB.dB·cm3$\mathrm{dB}\cdot {\mathrm{cm}}^{3}$/g, while the silver‐enhanced MXene/Ag/EMF reaches 81.4 dB shielding effectiveness at just 1.0 mm thickness. Both composites exhibit rapid Joule heating, retain stability up to 250∘C$^\circ{\rm C}$, and withstand 1000 ...
Abdullah A. Mahmood, Mingxuan Li, Vahid Rad, Mehdi Zarei, Chen‐Yu Yeh, Masoud Soroush, Guangyong Li, Paul W. Leu   +7 more
wiley   +1 more source

Gas‐Selective Remote Plasma Engineering of WO3 Photoanodes for Solar Water Splitting

Advanced Materials Interfaces, EarlyView.
Gas‐selective remote plasma treatment tunes the near‐surface defect chemistry of WO3 photoanodes without altering their bulk structure. Ar plasma generates the most oxygen‐vacancy‐rich surface and the highest W5+ content, delivering the strongest photocurrent.
Elham Jassemi Zargani, Amar K. Salih, Salma M. Ali, Hongjun Chen, Antonio Tricoli, Cuong Ton‐That   +5 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

MOS : metal oxide semiconductors

openaire   +1 more source

Some of the next articles are maybe not open access.

Related searches:

A metal-oxide-semiconductor varactor

IEEE Electron Device Letters, 1999
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance.
F Svelto, R Castello
exaly   +2 more sources

Complementary Metal Oxide Semiconductor Technology With and On Paper

Advanced Materials, 2011
Rodrigo Martins, Arokia Nathan, Raquel Barros   +2 more
exaly   +3 more sources