An Improved Model of Single-Event Transients Based on Effective Space Charge for Metal-Oxide-Semiconductor Field-Effect Transistor. [PDF]
Zhang Y +5 more
europepmc +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency
This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally +2 more
wiley +1 more source
A Review of Advancements in Metal Oxide Semiconductor Gas Sensors for Methane and Carbon Monoxide Towards Coal Mine Safety. [PDF]
Zhang Q, Fu ES, Yang Z, Tian LX.
europepmc +1 more source
Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration. [PDF]
Park BJ, Kim HS, Hahm SH.
europepmc +1 more source
Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes
Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti +11 more
wiley +1 more source
Amorphous metal-oxide semiconductor thin-film neuron, synapse, and neuromorphic system. [PDF]
Kimura M +15 more
europepmc +1 more source
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core +1 more source
n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis +19 more
wiley +1 more source
N-Type Metal Oxide Semiconductor Hydrogen Sensors: Mechanisms, Materials Design, and Interface Engineering Strategies. [PDF]
Jung D.
europepmc +1 more source

