Results 151 to 160 of about 2,648,294 (305)

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency

open access: yesAdvanced Materials, EarlyView.
This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally   +2 more
wiley   +1 more source

Transparent Perovskite Light‐Emitting Diodes with Conductive Oxide Top Electrodes

open access: yesAdvanced Materials, EarlyView.
Transparent perovskite light‐emitting diodes (TrPeLEDs) enable simultaneous display and transparency, expanding application possibilities. Using a metal oxide buffer layer and pulsed laser deposition, TrPeLEDs with diverse compositions and architectures are demonstrated.
Michele Forzatti   +11 more
wiley   +1 more source

Amorphous metal-oxide semiconductor thin-film neuron, synapse, and neuromorphic system. [PDF]

open access: yesSci Rep
Kimura M   +15 more
europepmc   +1 more source

Modeling of direct tunneling gate current and gate capacitance in deep submicron MOSFETs with high-K dielectric.

open access: yes, 2002
Scaling down of MOS device dimensions is accompanied by a decrease in gate-oxide thickness and an increase in substrate doping density. When gate oxide thickness becomes less than 2 nm, a substantial current follows through gate-oxide due to direct ...
Hakim, M. M. A.
core   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

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