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Due to enhanced charge transfer and carrier mobility on the surface, the SnTCPP NPs‐Nb2C Schottky heterojunctions demonstrate exceptional sunlight‐driven catalytic activity toward tetracycline antibiotics and ofloxacin degradation, achieving a removal efficiency of up to 99.9% within 60 min of irradiation, both in model wastewater and natural water ...
Juanxuan Guo +5 more
wiley +1 more source
A metal-oxide-semiconductor varactor
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance.
SVELTO, FRANCESCO +3 more
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Recent Progress on Flexible Room-Temperature Gas Sensors Based on Metal Oxide Semiconductor [PDF]
Meng-Yang Liu, Li-Yuan Zhu
exaly +2 more sources
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Complementary Metal Oxide Semiconductor Technology With and On Paper
Advanced Materials, 2011Luis Pereira +2 more
exaly +3 more sources
Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures
Reports on Progress in Physics, 2008Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These
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Photo-oxidation of alkanes by metal oxide semiconductors
Tetrahedron Letters, 1983Abstract The partial conversion of alkanes to the corresponding ketones has been achieved by irradiation of a suspension of semiconductor powder in oxygen-saturated alkanes. The reactivity of thermally and chemicallydoped semiconductor and the effect of chemisorbed water have also been studied.
C. Giannotti, S. Le Greneur, O. Watts
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Japanese Journal of Applied Physics, 2009
Variability due to Fermi level pinning at polycrystalline silicon gate grain boundary is examined as an additional source of intrinsic parameter fluctuation. Threshold voltage (Vt) variation with metal gate to avoid the variation is found to be mitigated with the measurement of n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs ...
Ji-Woon Yang +7 more
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Variability due to Fermi level pinning at polycrystalline silicon gate grain boundary is examined as an additional source of intrinsic parameter fluctuation. Threshold voltage (Vt) variation with metal gate to avoid the variation is found to be mitigated with the measurement of n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs ...
Ji-Woon Yang +7 more
openaire +1 more source

