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Efficient Sunlight Degradation of Wide‐Spectrum Antibiotics Through Enhanced Charge Separation in SnTCPP NPs‐Nb2C Schottky Heterojunction: Ultrafast Carrier Dynamic Study

open access: yesAdvanced Materials Interfaces, EarlyView.
Due to enhanced charge transfer and carrier mobility on the surface, the SnTCPP NPs‐Nb2C Schottky heterojunctions demonstrate exceptional sunlight‐driven catalytic activity toward tetracycline antibiotics and ofloxacin degradation, achieving a removal efficiency of up to 99.9% within 60 min of irradiation, both in model wastewater and natural water ...
Juanxuan Guo   +5 more
wiley   +1 more source

A metal-oxide-semiconductor varactor

open access: yesIEEE Electron Device Letters, 1999
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance.
SVELTO, FRANCESCO   +3 more
openaire   +2 more sources
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Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures

Reports on Progress in Physics, 2008
Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These
openaire   +1 more source

Photo-oxidation of alkanes by metal oxide semiconductors

Tetrahedron Letters, 1983
Abstract The partial conversion of alkanes to the corresponding ketones has been achieved by irradiation of a suspension of semiconductor powder in oxygen-saturated alkanes. The reactivity of thermally and chemicallydoped semiconductor and the effect of chemisorbed water have also been studied.
C. Giannotti, S. Le Greneur, O. Watts
openaire   +1 more source

Metal Oxide Semiconductors

2023
Zhigang Zang, Wensi Cai, Yong Zhou
openaire   +1 more source

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2009
Variability due to Fermi level pinning at polycrystalline silicon gate grain boundary is examined as an additional source of intrinsic parameter fluctuation. Threshold voltage (Vt) variation with metal gate to avoid the variation is found to be mitigated with the measurement of n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs ...
Ji-Woon Yang   +7 more
openaire   +1 more source

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