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Submicron, high speed complementary metal–oxide semiconductor compatible metal–semiconductor–metal photodetector

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2002
Metal–semiconductor–metal photodetectors with electrode spacing of 0.5 μm have been fabricated on polysilicon films formed by low-pressure chemical vapor deposition. The detectors give a responsivity of 8 mA/W at 980 nm, and a 3-dB bandwidth of 1.5 GHz.
DeVries, A. M.   +5 more
openaire   +1 more source

Metal Oxide Semiconductor Nanostructure Gas Sensors with Different Morphologies

Chemosensors, 2022
Sang Sub Kim   +2 more
exaly  

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE

2022
KIM SANGWOOK   +6 more
openaire   +3 more sources

ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review

Sensors, 2020
Cristian Viespe, Izabela Constantinoiu
exaly  

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