Results 251 to 260 of about 213,422 (311)

Metal Oxide-Based Monolithic Complementary Metal Oxide Semiconductor Gas Sensor Microsystem

Analytical Chemistry, 2004
A fully integrated gas sensor microsystem is presented, which comprises for the first time a micro hot plate as well as advanced analog and digital circuitry on a single chip. The micro hot plate is coated with a nanocrystalline SnO2 thick film. The sensor chip is produced in an industrial 0.8-microm CMOS process with subsequent micromachining steps. A
Markus, Graf, Diego, Barrettino, Stefano, Taschini, Christoph, Hagleitner, Andreas, Hierlemann, Henry, Baltes   +5 more
openaire   +2 more sources

A metal-oxide-semiconductor varactor

IEEE Electron Device Letters, 1999
CMOS technology scaling opens up the possibility of designing variable capacitors based on a metal oxide semiconductor structure with improved tuning range and quality factor. This is due to an increase in the oxide capacitance and a reduction in the parasitic resistance.
SVELTO, FRANCESCO, CASTELLO, RINALDO, P. Erratico, S. Manzini   +3 more
openaire   +1 more source

Metal oxide semiconductor NO2 sensor

Sensors and Actuators B: Chemical, 1995
Abstract A newly developed sensor for NO 2 has been investigated from a practical point of view. Various metal oxide semiconductors have been examined and as a result it is found that WO 3 shows the highest potentiality as an NO 2 sensor for air-quality monitoring.
Tomohiro Inoue, Kazuyuki Ohtsuka, Yutaka Yoshida, Yoshinobu Matsuura, Yoshihisa Kajiyama   +4 more
openaire   +1 more source

Clean Metal Oxide Semiconductor Systems

Fifth Annual Symposium on the Physics of Failure in Electronics, 1966
Aspects of sodium contamination of metal-oxide-silicon (MOS) systems associated with silicon surface preparation, the oxidation plenum, and post-oxidation procedures, including contact application, are discussed. The validity of neutron activation analysis to determine sodium distributions in MOS samples is established. Refractory materials for furnace
H. G. Carlson, C. R. Fuller, D. E. Meyer, J. R. Osborne, V. Harrap, G. A. Brown   +5 more
openaire   +1 more source

Spintronic effects in metallic, semiconductor, metal–oxide and metal–semiconductor heterostructures

Reports on Progress in Physics, 2008
Spintronics is a rapidly growing field focusing on phenomena and related devices essentially dependent on spin transport. Some of them are already an established part of microelectronics. We review recent theoretical and experimental advances in achieving large spin injection efficiency (polarization of current) and accumulated spin polarization. These
openaire   +1 more source

Metal oxide semiconductor UV sensor

2008 IEEE Sensors, 2008
By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved.
W.S. Ho, C.-H. Lin, P. -S. Kuo, W. W. Hsu, C. W. Liu, T.-H. Cheng, Y.-Y Chen   +6 more
openaire   +1 more source

Metal Oxide Semiconductor Gas Sensors

2020
The fabrication of gas sensors has undergone a revolutionary transition from the bulk thick films to nanomaterials synthesized by various techniques. The development of high-precision gas sensors plays a crucial role in our daily life for the real-time monitoring of toxic gases in the atmosphere.
Subha P. P, Pillai Aswathy Mohan, M. K. Jayaraj   +2 more
openaire   +1 more source

Mitigation of Complementary Metal–Oxide–Semiconductor Variability with Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics, 2009
Variability due to Fermi level pinning at polycrystalline silicon gate grain boundary is examined as an additional source of intrinsic parameter fluctuation. Threshold voltage (Vt) variation with metal gate to avoid the variation is found to be mitigated with the measurement of n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs ...
Ji-Woon Yang, Chang Seo Park, Casey E. Smith, Hemant Adhikari, Jeff Huang, Dawei Heh, Prashant Majhi, Raj Jammy   +7 more
openaire   +1 more source

Plasmonic Nanostructured Metal–Oxide–Semiconductor Reflection Modulators

Nano Letters, 2015
We propose a plasmonic surface that produces an electrically controlled reflectance as a high-speed intensity modulator. The device is conceived as a metal-oxide-semiconductor capacitor on silicon with its metal structured as a thin patch bearing a contiguous nanoscale grating. The metal structure serves multiple functions as a driving electrode and as
Anthony, Olivieri, Chengkun, Chen, Sa'ad, Hassan, Ewa, Lisicka-Skrzek, R Niall, Tait, Pierre, Berini   +5 more
openaire   +2 more sources

Metal-oxide-semiconductor (MOS) devices

2002
Abstract MOS integrated circuits, particularly those of the complementary form (CMOS), are very suitable for use in high-performance electronics such as timers, battery-powered computers, robots, missiles, and space vehicles. The power consumed by the CMOS logic element is extraordinarily low compared with nMOS and bipolar circuits.
Andrew Holmes-Siedle, Len Adams
openaire   +1 more source